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Artigo de periodico
Model analysis for differential pressure two-phase flow rate meter in intermittent flow rate meter in intermittent flow (2021)
Pellegrini, Sérgio de Paula ; Wrasse, A N; Silva, M J da; Melgarejo Morales, Rigoberto Eleazar; Trigo, Francisco; Baliño, Jorge Luis ; Trigo, Flávio Celso
Source: Flow Measurement and Instrumentation. Unidade: EP
Subjects: TRANSFERÊNCIA DE CALOR, FLUXO DOS GASES
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ABNT
PELLEGRINI, Sérgio de Paula et al. Model analysis for differential pressure two-phase flow rate meter in intermittent flow rate meter in intermittent flow. Flow Measurement and Instrumentation, v. 81, p. 1-12, 2021Tradução . . Disponível em: https://doi.org/10.1016/j.flowmeasinst.2021.102017. Acesso em: 12 jun. 2024.
APA
Pellegrini, S. de P., Wrasse, A. N., Silva, M. J. da, Melgarejo Morales, R. E., Trigo, F., Baliño, J. L., & Trigo, F. C. (2021). Model analysis for differential pressure two-phase flow rate meter in intermittent flow rate meter in intermittent flow. Flow Measurement and Instrumentation, 81, 1-12. doi:10.1016/j.flowmeasinst.2021.102017
NLM
Pellegrini S de P, Wrasse AN, Silva MJ da, Melgarejo Morales RE, Trigo F, Baliño JL, Trigo FC. Model analysis for differential pressure two-phase flow rate meter in intermittent flow rate meter in intermittent flow [Internet]. Flow Measurement and Instrumentation. 2021 ; 81 1-12.[citado 2024 jun. 12 ] Available from: https://doi.org/10.1016/j.flowmeasinst.2021.102017
Vancouver
Pellegrini S de P, Wrasse AN, Silva MJ da, Melgarejo Morales RE, Trigo F, Baliño JL, Trigo FC. Model analysis for differential pressure two-phase flow rate meter in intermittent flow rate meter in intermittent flow [Internet]. Flow Measurement and Instrumentation. 2021 ; 81 1-12.[citado 2024 jun. 12 ] Available from: https://doi.org/10.1016/j.flowmeasinst.2021.102017
Artigo de periodico
Smooth p-type GaAs(001) films grown by molecular-beam epitaxy using silicon as the dopant (2005)
Lamas, T. E.; Quivy, A. A.; Martini, S; Silva, M J da; Leite, J. R.
Source: Thin Solid Films. Unidade: IF
Subjects: MATÉRIA CONDENSADA, MATERIAIS, EFEITO HALL, FOTOLUMINESCÊNCIA, PROPRIEDADES DOS MATERIAIS
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ABNT
LAMAS, T. E. et al. Smooth p-type GaAs(001) films grown by molecular-beam epitaxy using silicon as the dopant. Thin Solid Films, v. 474, n. 1-2, p. 25-30, 2005Tradução . . Disponível em: https://doi.org/10.1016/j.tsf.2004.08.004. Acesso em: 12 jun. 2024.
APA
Lamas, T. E., Quivy, A. A., Martini, S., Silva, M. J. da, & Leite, J. R. (2005). Smooth p-type GaAs(001) films grown by molecular-beam epitaxy using silicon as the dopant. Thin Solid Films, 474( 1-2), 25-30. doi:10.1016/j.tsf.2004.08.004
NLM
Lamas TE, Quivy AA, Martini S, Silva MJ da, Leite JR. Smooth p-type GaAs(001) films grown by molecular-beam epitaxy using silicon as the dopant [Internet]. Thin Solid Films. 2005 ; 474( 1-2): 25-30.[citado 2024 jun. 12 ] Available from: https://doi.org/10.1016/j.tsf.2004.08.004
Vancouver
Lamas TE, Quivy AA, Martini S, Silva MJ da, Leite JR. Smooth p-type GaAs(001) films grown by molecular-beam epitaxy using silicon as the dopant [Internet]. Thin Solid Films. 2005 ; 474( 1-2): 25-30.[citado 2024 jun. 12 ] Available from: https://doi.org/10.1016/j.tsf.2004.08.004
Artigo de periodico
Large InAs/GaAs quantum dots with an optical response in the long-wavelength region (2005)
Silva, M J da; Quivy, A. A.; Martini, S; Lamas, T. E.; Silva, Euzi Conceicao Fernandes da; Leite, J. R.
Source: Journal of Crystal Growth. Unidade: IF
Subjects: POÇOS QUÂNTICOS, SEMICONDUTORES
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ABNT
SILVA, M J da et al. Large InAs/GaAs quantum dots with an optical response in the long-wavelength region. Journal of Crystal Growth, v. 278, p. 103-107, 2005Tradução . . Disponível em: https://doi.org/10.1016/j.jcrysgro.2004.12.118. Acesso em: 12 jun. 2024.
APA
Silva, M. J. da, Quivy, A. A., Martini, S., Lamas, T. E., Silva, E. C. F. da, & Leite, J. R. (2005). Large InAs/GaAs quantum dots with an optical response in the long-wavelength region. Journal of Crystal Growth, 278, 103-107. doi:10.1016/j.jcrysgro.2004.12.118
NLM
Silva MJ da, Quivy AA, Martini S, Lamas TE, Silva ECF da, Leite JR. Large InAs/GaAs quantum dots with an optical response in the long-wavelength region [Internet]. Journal of Crystal Growth. 2005 ; 278 103-107.[citado 2024 jun. 12 ] Available from: https://doi.org/10.1016/j.jcrysgro.2004.12.118
Vancouver
Silva MJ da, Quivy AA, Martini S, Lamas TE, Silva ECF da, Leite JR. Large InAs/GaAs quantum dots with an optical response in the long-wavelength region [Internet]. Journal of Crystal Growth. 2005 ; 278 103-107.[citado 2024 jun. 12 ] Available from: https://doi.org/10.1016/j.jcrysgro.2004.12.118
Artigo de periodico
Photoreflectance study of energy level structure of self-assembled InAs/GaAs quantum dots emitting at 1.3"mu"m (2005)
Rudno-Rudzinski; Ryczko, K; Sek, G; Misiewicz, J; Silva, M J da; Quivy, A. A.
Source: Solid State Communications. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, LASER, FOTOLUMINESCÊNCIA
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ABNT
RUDNO-RUDZINSKI, et al. Photoreflectance study of energy level structure of self-assembled InAs/GaAs quantum dots emitting at 1.3"mu"m. Solid State Communications, v. 135, n. 4, p. 232-236, 2005Tradução . . Disponível em: https://doi.org/10.1016/j.ssc.2005.04.030. Acesso em: 12 jun. 2024.
APA
Rudno-Rudzinski,, Ryczko, K., Sek, G., Misiewicz, J., Silva, M. J. da, & Quivy, A. A. (2005). Photoreflectance study of energy level structure of self-assembled InAs/GaAs quantum dots emitting at 1.3"mu"m. Solid State Communications, 135( 4), 232-236. doi:10.1016/j.ssc.2005.04.030
NLM
Rudno-Rudzinski, Ryczko K, Sek G, Misiewicz J, Silva MJ da, Quivy AA. Photoreflectance study of energy level structure of self-assembled InAs/GaAs quantum dots emitting at 1.3"mu"m [Internet]. Solid State Communications. 2005 ; 135( 4): 232-236.[citado 2024 jun. 12 ] Available from: https://doi.org/10.1016/j.ssc.2005.04.030
Vancouver
Rudno-Rudzinski, Ryczko K, Sek G, Misiewicz J, Silva MJ da, Quivy AA. Photoreflectance study of energy level structure of self-assembled InAs/GaAs quantum dots emitting at 1.3"mu"m [Internet]. Solid State Communications. 2005 ; 135( 4): 232-236.[citado 2024 jun. 12 ] Available from: https://doi.org/10.1016/j.ssc.2005.04.030
Artigo de periodico
InAs/GaAs quantum dots optically active at 1.5 'mu' (2003)
Silva, M J da; Quivy, A. A.; Martini, S; Lamas, T E; Silva, Euzi Conceicao Fernandes da; Leite, J. R.
Source: Applied Physics Letters. Unidade: IF
Subjects: MATERIAIS, ESTRUTURA DOS MATERIAIS, FILMES FINOS
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ABNT
SILVA, M J da et al. InAs/GaAs quantum dots optically active at 1.5 'mu'. Applied Physics Letters, v. 82, n. 16, p. 2646-2648, 2003Tradução . . Disponível em: https://doi.org/10.1063/1.1569053. Acesso em: 12 jun. 2024.
APA
Silva, M. J. da, Quivy, A. A., Martini, S., Lamas, T. E., Silva, E. C. F. da, & Leite, J. R. (2003). InAs/GaAs quantum dots optically active at 1.5 'mu'. Applied Physics Letters, 82( 16), 2646-2648. doi:10.1063/1.1569053
NLM
Silva MJ da, Quivy AA, Martini S, Lamas TE, Silva ECF da, Leite JR. InAs/GaAs quantum dots optically active at 1.5 'mu' [Internet]. Applied Physics Letters. 2003 ; 82( 16): 2646-2648.[citado 2024 jun. 12 ] Available from: https://doi.org/10.1063/1.1569053
Vancouver
Silva MJ da, Quivy AA, Martini S, Lamas TE, Silva ECF da, Leite JR. InAs/GaAs quantum dots optically active at 1.5 'mu' [Internet]. Applied Physics Letters. 2003 ; 82( 16): 2646-2648.[citado 2024 jun. 12 ] Available from: https://doi.org/10.1063/1.1569053
Artigo de periodico
CW photoluminescence determination of the capture cross-section of self-assembled InAs quantum dots (2003)
Cruz, J M R; Sales, F V de; Silva, S W da; Soler, M A G; Morais, P C; Silva, M J da; Quivy, A. A.; Leite, J. R.
Source: Physica E. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, FOTOLUMINESCÊNCIA
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ABNT
CRUZ, J M R et al. CW photoluminescence determination of the capture cross-section of self-assembled InAs quantum dots. Physica E, v. 17, n. 1-4, p. 107-108, 2003Tradução . . Disponível em: https://doi.org/10.1016/s1386-9477(02)00721-x. Acesso em: 12 jun. 2024.
APA
Cruz, J. M. R., Sales, F. V. de, Silva, S. W. da, Soler, M. A. G., Morais, P. C., Silva, M. J. da, et al. (2003). CW photoluminescence determination of the capture cross-section of self-assembled InAs quantum dots. Physica E, 17( 1-4), 107-108. doi:10.1016/s1386-9477(02)00721-x
NLM
Cruz JMR, Sales FV de, Silva SW da, Soler MAG, Morais PC, Silva MJ da, Quivy AA, Leite JR. CW photoluminescence determination of the capture cross-section of self-assembled InAs quantum dots [Internet]. Physica E. 2003 ; 17( 1-4): 107-108.[citado 2024 jun. 12 ] Available from: https://doi.org/10.1016/s1386-9477(02)00721-x
Vancouver
Cruz JMR, Sales FV de, Silva SW da, Soler MAG, Morais PC, Silva MJ da, Quivy AA, Leite JR. CW photoluminescence determination of the capture cross-section of self-assembled InAs quantum dots [Internet]. Physica E. 2003 ; 17( 1-4): 107-108.[citado 2024 jun. 12 ] Available from: https://doi.org/10.1016/s1386-9477(02)00721-x
Artigo de periodico
Observation of the spectral dependence of the spatial photocarrier redistribution in InAs/GaAs quantum dots (2003)
Sales, F V de; Silva, S W da; Cruz, J M R; Soler, M A G; Morais, P C; Silva, M J da; Quivy, A. A.; Leite, J. R.
Source: Physica E. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, FOTOLUMINESCÊNCIA
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ABNT
SALES, F V de et al. Observation of the spectral dependence of the spatial photocarrier redistribution in InAs/GaAs quantum dots. Physica E, v. 17, n. 1-4, p. 120-121, 2003Tradução . . Disponível em: https://doi.org/10.1016/s1386-9477(02)00739-7. Acesso em: 12 jun. 2024.
APA
Sales, F. V. de, Silva, S. W. da, Cruz, J. M. R., Soler, M. A. G., Morais, P. C., Silva, M. J. da, et al. (2003). Observation of the spectral dependence of the spatial photocarrier redistribution in InAs/GaAs quantum dots. Physica E, 17( 1-4), 120-121. doi:10.1016/s1386-9477(02)00739-7
NLM
Sales FV de, Silva SW da, Cruz JMR, Soler MAG, Morais PC, Silva MJ da, Quivy AA, Leite JR. Observation of the spectral dependence of the spatial photocarrier redistribution in InAs/GaAs quantum dots [Internet]. Physica E. 2003 ; 17( 1-4): 120-121.[citado 2024 jun. 12 ] Available from: https://doi.org/10.1016/s1386-9477(02)00739-7
Vancouver
Sales FV de, Silva SW da, Cruz JMR, Soler MAG, Morais PC, Silva MJ da, Quivy AA, Leite JR. Observation of the spectral dependence of the spatial photocarrier redistribution in InAs/GaAs quantum dots [Internet]. Physica E. 2003 ; 17( 1-4): 120-121.[citado 2024 jun. 12 ] Available from: https://doi.org/10.1016/s1386-9477(02)00739-7
Artigo de periodico
Morphological and optical properties of p-type GaAs(001) layers doped with silicon (2003)
Lamas, T. E.; Martini, S; Silva, M J da; Quivy, A. A.; Leite, J. R.
Source: Microelectronics Journal. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, SEMICONDUTORES
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ABNT
LAMAS, T. E. et al. Morphological and optical properties of p-type GaAs(001) layers doped with silicon. Microelectronics Journal, v. 34, n. 5-8, p. 701-703, 2003Tradução . . Disponível em: https://doi.org/10.1016/s0026-2692(03)00106-x. Acesso em: 12 jun. 2024.
APA
Lamas, T. E., Martini, S., Silva, M. J. da, Quivy, A. A., & Leite, J. R. (2003). Morphological and optical properties of p-type GaAs(001) layers doped with silicon. Microelectronics Journal, 34( 5-8), 701-703. doi:10.1016/s0026-2692(03)00106-x
NLM
Lamas TE, Martini S, Silva MJ da, Quivy AA, Leite JR. Morphological and optical properties of p-type GaAs(001) layers doped with silicon [Internet]. Microelectronics Journal. 2003 ; 34( 5-8): 701-703.[citado 2024 jun. 12 ] Available from: https://doi.org/10.1016/s0026-2692(03)00106-x
Vancouver
Lamas TE, Martini S, Silva MJ da, Quivy AA, Leite JR. Morphological and optical properties of p-type GaAs(001) layers doped with silicon [Internet]. Microelectronics Journal. 2003 ; 34( 5-8): 701-703.[citado 2024 jun. 12 ] Available from: https://doi.org/10.1016/s0026-2692(03)00106-x
Artigo de periodico
Influence of illumination on the quantum mobility of a two-dimensional electron gas in Si 'sigma'-doped 'GaAs/In IND.0.15' 'Ga IND.0.85'As quantum wells (2003)
Cavalheiro, A; Silva, Euzi Conceicao Fernandes da; Quivy, A. A.; Takahashi, E K; Martini, S; Silva, M J da; Meneses, E A; Leite, J. R.
Source: Journal of Physics: Condensed Matter. Unidade: IF
Assunto: SUPERCONDUTIVIDADE
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ABNT
CAVALHEIRO, A et al. Influence of illumination on the quantum mobility of a two-dimensional electron gas in Si 'sigma'-doped 'GaAs/In IND.0.15' 'Ga IND.0.85'As quantum wells. Journal of Physics: Condensed Matter, v. 15, n. 2, p. 121-132, 2003Tradução . . Disponível em: http://ej.iop.org/links/q87/UGqnwPFy6IAHtfZURvYaBg/c30212.pdf. Acesso em: 12 jun. 2024.
APA
Cavalheiro, A., Silva, E. C. F. da, Quivy, A. A., Takahashi, E. K., Martini, S., Silva, M. J. da, et al. (2003). Influence of illumination on the quantum mobility of a two-dimensional electron gas in Si 'sigma'-doped 'GaAs/In IND.0.15' 'Ga IND.0.85'As quantum wells. Journal of Physics: Condensed Matter, 15( 2), 121-132. Recuperado de http://ej.iop.org/links/q87/UGqnwPFy6IAHtfZURvYaBg/c30212.pdf
NLM
Cavalheiro A, Silva ECF da, Quivy AA, Takahashi EK, Martini S, Silva MJ da, Meneses EA, Leite JR. Influence of illumination on the quantum mobility of a two-dimensional electron gas in Si 'sigma'-doped 'GaAs/In IND.0.15' 'Ga IND.0.85'As quantum wells [Internet]. Journal of Physics: Condensed Matter. 2003 ; 15( 2): 121-132.[citado 2024 jun. 12 ] Available from: http://ej.iop.org/links/q87/UGqnwPFy6IAHtfZURvYaBg/c30212.pdf
Vancouver
Cavalheiro A, Silva ECF da, Quivy AA, Takahashi EK, Martini S, Silva MJ da, Meneses EA, Leite JR. Influence of illumination on the quantum mobility of a two-dimensional electron gas in Si 'sigma'-doped 'GaAs/In IND.0.15' 'Ga IND.0.85'As quantum wells [Internet]. Journal of Physics: Condensed Matter. 2003 ; 15( 2): 121-132.[citado 2024 jun. 12 ] Available from: http://ej.iop.org/links/q87/UGqnwPFy6IAHtfZURvYaBg/c30212.pdf
Artigo de periodico
Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 'mu'm (2003)
Silva, M J da; Martini, S; Lamas, T. E.; Quivy, A. A.; Silva, Euzi Conceicao Fernandes da; Leite, J. R.
Source: Microelectronics Journal. Unidade: IF
Assunto: ESTRUTURA ELETRÔNICA
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ABNT
SILVA, M J da et al. Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 'mu'm. Microelectronics Journal, v. 34, n. 5-8, p. 631-633, 2003Tradução . . Disponível em: https://doi.org/10.1016/s0026-2692(03)00066-1. Acesso em: 12 jun. 2024.
APA
Silva, M. J. da, Martini, S., Lamas, T. E., Quivy, A. A., Silva, E. C. F. da, & Leite, J. R. (2003). Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 'mu'm. Microelectronics Journal, 34( 5-8), 631-633. doi:10.1016/s0026-2692(03)00066-1
NLM
Silva MJ da, Martini S, Lamas TE, Quivy AA, Silva ECF da, Leite JR. Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 'mu'm [Internet]. Microelectronics Journal. 2003 ; 34( 5-8): 631-633.[citado 2024 jun. 12 ] Available from: https://doi.org/10.1016/s0026-2692(03)00066-1
Vancouver
Silva MJ da, Martini S, Lamas TE, Quivy AA, Silva ECF da, Leite JR. Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 'mu'm [Internet]. Microelectronics Journal. 2003 ; 34( 5-8): 631-633.[citado 2024 jun. 12 ] Available from: https://doi.org/10.1016/s0026-2692(03)00066-1
Trabalho de evento-resumo
Energy transfer in small lens-shaped in as quantum dots observed by microluminescence image (2003)
Sales, F V de; Silva, S W da; Cruz, J M R; Monte, A F G; Soler, M A G; Morais, P C; Silva, M J da; Quivy, A. A.; Leite, J. R.
Source: Book of Abstracts. Conference titles: International Meeting on Applied Physics. Unidade: IF
Subjects: FÍSICA, ESTRUTURA ELETRÔNICA, MATÉRIA CONDENSADA
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ABNT
SALES, F V de et al. Energy transfer in small lens-shaped in as quantum dots observed by microluminescence image. 2003, Anais.. Badajoz: APHYS, 2003. . Acesso em: 12 jun. 2024.
APA
Sales, F. V. de, Silva, S. W. da, Cruz, J. M. R., Monte, A. F. G., Soler, M. A. G., Morais, P. C., et al. (2003). Energy transfer in small lens-shaped in as quantum dots observed by microluminescence image. In Book of Abstracts. Badajoz: APHYS.
NLM
Sales FV de, Silva SW da, Cruz JMR, Monte AFG, Soler MAG, Morais PC, Silva MJ da, Quivy AA, Leite JR. Energy transfer in small lens-shaped in as quantum dots observed by microluminescence image. Book of Abstracts. 2003 ;[citado 2024 jun. 12 ]
Vancouver
Sales FV de, Silva SW da, Cruz JMR, Monte AFG, Soler MAG, Morais PC, Silva MJ da, Quivy AA, Leite JR. Energy transfer in small lens-shaped in as quantum dots observed by microluminescence image. Book of Abstracts. 2003 ;[citado 2024 jun. 12 ]
Trabalho de evento-resumo
Large InAs/GaAs quantum dots optically active in the long-wavelength region (2003)
Silva, M J da; Martini, S; Lamas, T. E.; Quivy, A. A.; Silva, Euzi Conceicao Fernandes da; Leite, J. R.
Source: Book of Abstracts. Conference titles: International Conference on Defects in Semiconductors. Unidade: IF
Subjects: SEMICONDUTORES, ESTRUTURA ELETRÔNICA
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ABNT
SILVA, M J da et al. Large InAs/GaAs quantum dots optically active in the long-wavelength region. 2003, Anais.. Amsterdam: Elsevier Science, 2003. . Acesso em: 12 jun. 2024.
APA
Silva, M. J. da, Martini, S., Lamas, T. E., Quivy, A. A., Silva, E. C. F. da, & Leite, J. R. (2003). Large InAs/GaAs quantum dots optically active in the long-wavelength region. In Book of Abstracts. Amsterdam: Elsevier Science.
NLM
Silva MJ da, Martini S, Lamas TE, Quivy AA, Silva ECF da, Leite JR. Large InAs/GaAs quantum dots optically active in the long-wavelength region. Book of Abstracts. 2003 ;[citado 2024 jun. 12 ]
Vancouver
Silva MJ da, Martini S, Lamas TE, Quivy AA, Silva ECF da, Leite JR. Large InAs/GaAs quantum dots optically active in the long-wavelength region. Book of Abstracts. 2003 ;[citado 2024 jun. 12 ]
Trabalho de evento-resumo
Carbon doping of GaAs and AlGaAs layers grown on (100) and (311) substrates by molecular beam epitaxy (2003)
Lamas, T. E.; Quivy, A. A.; Martini, S; Silva, M J da; Leite, J. R.
Source: Book of Abstract. Conference titles: Brazilian Workshop on Semiconductor Physics. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, FOTOLUMINESCÊNCIA
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ABNT
LAMAS, T. E. et al. Carbon doping of GaAs and AlGaAs layers grown on (100) and (311) substrates by molecular beam epitaxy. 2003, Anais.. Fortaleza: DF/UFC, 2003. . Acesso em: 12 jun. 2024.
APA
Lamas, T. E., Quivy, A. A., Martini, S., Silva, M. J. da, & Leite, J. R. (2003). Carbon doping of GaAs and AlGaAs layers grown on (100) and (311) substrates by molecular beam epitaxy. In Book of Abstract. Fortaleza: DF/UFC.
NLM
Lamas TE, Quivy AA, Martini S, Silva MJ da, Leite JR. Carbon doping of GaAs and AlGaAs layers grown on (100) and (311) substrates by molecular beam epitaxy. Book of Abstract. 2003 ;[citado 2024 jun. 12 ]
Vancouver
Lamas TE, Quivy AA, Martini S, Silva MJ da, Leite JR. Carbon doping of GaAs and AlGaAs layers grown on (100) and (311) substrates by molecular beam epitaxy. Book of Abstract. 2003 ;[citado 2024 jun. 12 ]
Artigo de periodico
Ex-situ investigation of indium segregation in InGaAs/GaAs quantum wells using high-resolution x-ray diffraction (2003)
Martini, S; Quivy, A. A.; Silva, M J da; Lamas, T E; Silva, E C F da; Leite, J. R.; Abramof, E
Source: Journal of Applied Physics. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, DIFRAÇÃO POR RAIOS X
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ABNT
MARTINI, S et al. Ex-situ investigation of indium segregation in InGaAs/GaAs quantum wells using high-resolution x-ray diffraction. Journal of Applied Physics, 2003Tradução . . Disponível em: https://doi.org/10.1063/1.1621738. Acesso em: 12 jun. 2024.
APA
Martini, S., Quivy, A. A., Silva, M. J. da, Lamas, T. E., Silva, E. C. F. da, Leite, J. R., & Abramof, E. (2003). Ex-situ investigation of indium segregation in InGaAs/GaAs quantum wells using high-resolution x-ray diffraction. Journal of Applied Physics. doi:10.1063/1.1621738
NLM
Martini S, Quivy AA, Silva MJ da, Lamas TE, Silva ECF da, Leite JR, Abramof E. Ex-situ investigation of indium segregation in InGaAs/GaAs quantum wells using high-resolution x-ray diffraction [Internet]. Journal of Applied Physics. 2003 ;[citado 2024 jun. 12 ] Available from: https://doi.org/10.1063/1.1621738
Vancouver
Martini S, Quivy AA, Silva MJ da, Lamas TE, Silva ECF da, Leite JR, Abramof E. Ex-situ investigation of indium segregation in InGaAs/GaAs quantum wells using high-resolution x-ray diffraction [Internet]. Journal of Applied Physics. 2003 ;[citado 2024 jun. 12 ] Available from: https://doi.org/10.1063/1.1621738
Artigo de periodico
Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots (2003)
Duarte, C A; Silva, Euzi Conceicao Fernandes da; Quivy, A. A.; Silva, M J da; Martini, S; Leite, J. R.; Meneses, E A; Lauretto, E
Source: Journal of Applied Physics. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, DIFRAÇÃO POR RAIOS X, ÓPTICA, FOTOLUMINESCÊNCIA
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ABNT
DUARTE, C A et al. Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots. Journal of Applied Physics, v. 93, n. 10, p. 6279-6283, 2003Tradução . . Disponível em: https://doi.org/10.1063/1.1568538. Acesso em: 12 jun. 2024.
APA
Duarte, C. A., Silva, E. C. F. da, Quivy, A. A., Silva, M. J. da, Martini, S., Leite, J. R., et al. (2003). Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots. Journal of Applied Physics, 93( 10), 6279-6283. doi:10.1063/1.1568538
NLM
Duarte CA, Silva ECF da, Quivy AA, Silva MJ da, Martini S, Leite JR, Meneses EA, Lauretto E. Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots [Internet]. Journal of Applied Physics. 2003 ; 93( 10): 6279-6283.[citado 2024 jun. 12 ] Available from: https://doi.org/10.1063/1.1568538
Vancouver
Duarte CA, Silva ECF da, Quivy AA, Silva MJ da, Martini S, Leite JR, Meneses EA, Lauretto E. Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots [Internet]. Journal of Applied Physics. 2003 ; 93( 10): 6279-6283.[citado 2024 jun. 12 ] Available from: https://doi.org/10.1063/1.1568538
Artigo de periodico
Carrier kinetics in quantum dots through continuos wave photoluminescence modeling: a systematic study on a sample with surface dot density gradient (2003)
Sales, F V de; Cruz, J M R; Silva, S W da; Soler, M A G; Morais, P C de; Silva, M J da; Quivy, A. A.; Leite, J. R.
Source: Journal of Applied Physics. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, FOTOLUMINESCÊNCIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SALES, F V de et al. Carrier kinetics in quantum dots through continuos wave photoluminescence modeling: a systematic study on a sample with surface dot density gradient. Journal of Applied Physics, v. 94, n. 3, p. 1787-1794, 2003Tradução . . Disponível em: https://doi.org/10.1063/1.1586953. Acesso em: 12 jun. 2024.
APA
Sales, F. V. de, Cruz, J. M. R., Silva, S. W. da, Soler, M. A. G., Morais, P. C. de, Silva, M. J. da, et al. (2003). Carrier kinetics in quantum dots through continuos wave photoluminescence modeling: a systematic study on a sample with surface dot density gradient. Journal of Applied Physics, 94( 3), 1787-1794. doi:10.1063/1.1586953
NLM
Sales FV de, Cruz JMR, Silva SW da, Soler MAG, Morais PC de, Silva MJ da, Quivy AA, Leite JR. Carrier kinetics in quantum dots through continuos wave photoluminescence modeling: a systematic study on a sample with surface dot density gradient [Internet]. Journal of Applied Physics. 2003 ; 94( 3): 1787-1794.[citado 2024 jun. 12 ] Available from: https://doi.org/10.1063/1.1586953
Vancouver
Sales FV de, Cruz JMR, Silva SW da, Soler MAG, Morais PC de, Silva MJ da, Quivy AA, Leite JR. Carrier kinetics in quantum dots through continuos wave photoluminescence modeling: a systematic study on a sample with surface dot density gradient [Internet]. Journal of Applied Physics. 2003 ; 94( 3): 1787-1794.[citado 2024 jun. 12 ] Available from: https://doi.org/10.1063/1.1586953
Artigo de periodico
Optical response at 1.3 'mu'm and 1.5 'mu'm with InAs quantum dots embedded in a pure GaAs matrix (2003)
Silva, M J da; Quivy, A. A.; Martini, S; Lamas, T. E.; Silva, Euzi Conceicao Fernandes da; Leite, J. R.
Source: Journal of Crystal Growth. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, SUPERCOMPUTADORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SILVA, M J da et al. Optical response at 1.3 'mu'm and 1.5 'mu'm with InAs quantum dots embedded in a pure GaAs matrix. Journal of Crystal Growth, v. 251, n. 1-4, p. 181-185, 2003Tradução . . Disponível em: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5302&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=841273c738a47f3959822930346abf20. Acesso em: 12 jun. 2024.
APA
Silva, M. J. da, Quivy, A. A., Martini, S., Lamas, T. E., Silva, E. C. F. da, & Leite, J. R. (2003). Optical response at 1.3 'mu'm and 1.5 'mu'm with InAs quantum dots embedded in a pure GaAs matrix. Journal of Crystal Growth, 251( 1-4), 181-185. Recuperado de http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5302&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=841273c738a47f3959822930346abf20
NLM
Silva MJ da, Quivy AA, Martini S, Lamas TE, Silva ECF da, Leite JR. Optical response at 1.3 'mu'm and 1.5 'mu'm with InAs quantum dots embedded in a pure GaAs matrix [Internet]. Journal of Crystal Growth. 2003 ; 251( 1-4): 181-185.[citado 2024 jun. 12 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5302&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=841273c738a47f3959822930346abf20
Vancouver
Silva MJ da, Quivy AA, Martini S, Lamas TE, Silva ECF da, Leite JR. Optical response at 1.3 'mu'm and 1.5 'mu'm with InAs quantum dots embedded in a pure GaAs matrix [Internet]. Journal of Crystal Growth. 2003 ; 251( 1-4): 181-185.[citado 2024 jun. 12 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5302&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=841273c738a47f3959822930346abf20
Artigo de periodico
Coupled rate equation modeling of self-assembled quantum dot photoluminescence (2003)
Sales, F V de; Cruz, J M R; Silva, S W da; Soler, M A G; Morais, P C; Silva, M J da; Quivy, A. A.; Leite, J. R.
Source: Microelectronics Journal. Unidade: IF
Assunto: ESTRUTURA ELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SALES, F V de et al. Coupled rate equation modeling of self-assembled quantum dot photoluminescence. Microelectronics Journal, v. 34, n. 5-8, p. 705-707, 2003Tradução . . Disponível em: https://doi.org/10.1016/s0026-2692(03)00107-1. Acesso em: 12 jun. 2024.
APA
Sales, F. V. de, Cruz, J. M. R., Silva, S. W. da, Soler, M. A. G., Morais, P. C., Silva, M. J. da, et al. (2003). Coupled rate equation modeling of self-assembled quantum dot photoluminescence. Microelectronics Journal, 34( 5-8), 705-707. doi:10.1016/s0026-2692(03)00107-1
NLM
Sales FV de, Cruz JMR, Silva SW da, Soler MAG, Morais PC, Silva MJ da, Quivy AA, Leite JR. Coupled rate equation modeling of self-assembled quantum dot photoluminescence [Internet]. Microelectronics Journal. 2003 ; 34( 5-8): 705-707.[citado 2024 jun. 12 ] Available from: https://doi.org/10.1016/s0026-2692(03)00107-1
Vancouver
Sales FV de, Cruz JMR, Silva SW da, Soler MAG, Morais PC, Silva MJ da, Quivy AA, Leite JR. Coupled rate equation modeling of self-assembled quantum dot photoluminescence [Internet]. Microelectronics Journal. 2003 ; 34( 5-8): 705-707.[citado 2024 jun. 12 ] Available from: https://doi.org/10.1016/s0026-2692(03)00107-1
Artigo de periodico
Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface (2003)
Martini, S; Quivy, A. A.; Lamas, T. E.; Silva, M J da; Silva, Euzi Conceicao Fernandes da; Leite, J. R.
Source: Journal of Crystal Growth. Unidade: IF
Subjects: DIFRAÇÃO POR RAIOS X, SUPERFÍCIE FÍSICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MARTINI, S et al. Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface. Journal of Crystal Growth, v. 251, n. 1-4, p. 101-105, 2003Tradução . . Disponível em: https://doi.org/10.1016/s0022-0248(02)02313-8. Acesso em: 12 jun. 2024.
APA
Martini, S., Quivy, A. A., Lamas, T. E., Silva, M. J. da, Silva, E. C. F. da, & Leite, J. R. (2003). Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface. Journal of Crystal Growth, 251( 1-4), 101-105. doi:10.1016/s0022-0248(02)02313-8
NLM
Martini S, Quivy AA, Lamas TE, Silva MJ da, Silva ECF da, Leite JR. Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface [Internet]. Journal of Crystal Growth. 2003 ; 251( 1-4): 101-105.[citado 2024 jun. 12 ] Available from: https://doi.org/10.1016/s0022-0248(02)02313-8
Vancouver
Martini S, Quivy AA, Lamas TE, Silva MJ da, Silva ECF da, Leite JR. Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface [Internet]. Journal of Crystal Growth. 2003 ; 251( 1-4): 101-105.[citado 2024 jun. 12 ] Available from: https://doi.org/10.1016/s0022-0248(02)02313-8
Artigo de periodico
Photoexcited carrier diffusion in self-assembled InAs/GaAs quantum dots with different dot densities (2003)
Monte, A F G; Sales, F V de; Silva, S W da; Soler, M A G; Cruz, J M R; Morais, P C; Silva, M J da; Quivy, A. A.; Leite, J. R.
Source: Physica E. Unidade: IF
Assunto: ESTRUTURA ELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MONTE, A F G et al. Photoexcited carrier diffusion in self-assembled InAs/GaAs quantum dots with different dot densities. Physica E, v. 17, n. 1-4, p. 122-123, 2003Tradução . . Disponível em: https://doi.org/10.1016/s1386-9477(02)00741-5. Acesso em: 12 jun. 2024.
APA
Monte, A. F. G., Sales, F. V. de, Silva, S. W. da, Soler, M. A. G., Cruz, J. M. R., Morais, P. C., et al. (2003). Photoexcited carrier diffusion in self-assembled InAs/GaAs quantum dots with different dot densities. Physica E, 17( 1-4), 122-123. doi:10.1016/s1386-9477(02)00741-5
NLM
Monte AFG, Sales FV de, Silva SW da, Soler MAG, Cruz JMR, Morais PC, Silva MJ da, Quivy AA, Leite JR. Photoexcited carrier diffusion in self-assembled InAs/GaAs quantum dots with different dot densities [Internet]. Physica E. 2003 ; 17( 1-4): 122-123.[citado 2024 jun. 12 ] Available from: https://doi.org/10.1016/s1386-9477(02)00741-5
Vancouver
Monte AFG, Sales FV de, Silva SW da, Soler MAG, Cruz JMR, Morais PC, Silva MJ da, Quivy AA, Leite JR. Photoexcited carrier diffusion in self-assembled InAs/GaAs quantum dots with different dot densities [Internet]. Physica E. 2003 ; 17( 1-4): 122-123.[citado 2024 jun. 12 ] Available from: https://doi.org/10.1016/s1386-9477(02)00741-5

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