In-situ measurement of indium segregation in InAs/GaAs submonolayer quantum dots (2019)
Source: Materials Research Express. Unidades: IF, ICMC
Assunto: ELÉTRONS
ABNT
CANTALICE, Tiago Fernandes de et al. In-situ measurement of indium segregation in InAs/GaAs submonolayer quantum dots. Materials Research Express, v. 6 p. 126205(6), 2019Tradução . . Disponível em: https://doi.org/10.1088/2053-1591/ab55a8. Acesso em: 24 abr. 2024.APA
Cantalice, T. F. de, Alzeidan, A., Urahata, S. M., & Quivy, A. A. (2019). In-situ measurement of indium segregation in InAs/GaAs submonolayer quantum dots. Materials Research Express, 6 p. 126205(6). doi:10.1088/2053-1591/ab55a8NLM
Cantalice TF de, Alzeidan A, Urahata SM, Quivy AA. In-situ measurement of indium segregation in InAs/GaAs submonolayer quantum dots [Internet]. Materials Research Express. 2019 ;6 p. 126205(6)[citado 2024 abr. 24 ] Available from: https://doi.org/10.1088/2053-1591/ab55a8Vancouver
Cantalice TF de, Alzeidan A, Urahata SM, Quivy AA. In-situ measurement of indium segregation in InAs/GaAs submonolayer quantum dots [Internet]. Materials Research Express. 2019 ;6 p. 126205(6)[citado 2024 abr. 24 ] Available from: https://doi.org/10.1088/2053-1591/ab55a8