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Filtros : "Applied physics letters" Limpar

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  • Artigo de periodico

    Formation of an extended 'CO''SI' IND. 2' thin nanohexagons array coherently buried in silicon single crystal (2012)

    Kellermann, Guinther; Montoro, Luciano A; Ramirez, Antonio J; Giovanetti, Lisandro J; Claro, Paula C dos Santos; Requejo, Félix G; Zhang, Liang; Craievich, Aldo Felix

    Source: Applied physics letters. Unidade: IF

    Assunto: SILÍCIO

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    • ABNT

      KELLERMANN, Guinther et al. Formation of an extended 'CO''SI' IND. 2' thin nanohexagons array coherently buried in silicon single crystal. Applied physics letters, v. fe2012, n. 6, p. 063116, 2012Tradução . . Disponível em: https://doi.org/10.1063/1.3683493. Acesso em: 12 jun. 2024.

    • APA

      Kellermann, G., Montoro, L. A., Ramirez, A. J., Giovanetti, L. J., Claro, P. C. dos S., Requejo, F. G., et al. (2012). Formation of an extended 'CO''SI' IND. 2' thin nanohexagons array coherently buried in silicon single crystal. Applied physics letters, fe2012( 6), 063116. doi:10.1063/1.3683493

    • NLM

      Kellermann G, Montoro LA, Ramirez AJ, Giovanetti LJ, Claro PC dos S, Requejo FG, Zhang L, Craievich AF. Formation of an extended 'CO''SI' IND. 2' thin nanohexagons array coherently buried in silicon single crystal [Internet]. Applied physics letters. 2012 ; fe2012( 6): 063116.[citado 2024 jun. 12 ] Available from: https://doi.org/10.1063/1.3683493

    • Vancouver

      Kellermann G, Montoro LA, Ramirez AJ, Giovanetti LJ, Claro PC dos S, Requejo FG, Zhang L, Craievich AF. Formation of an extended 'CO''SI' IND. 2' thin nanohexagons array coherently buried in silicon single crystal [Internet]. Applied physics letters. 2012 ; fe2012( 6): 063116.[citado 2024 jun. 12 ] Available from: https://doi.org/10.1063/1.3683493

  • Artigo de periodico

    Accurate band gaps of 'AL''GA'N, 'IN''GA'N, and 'AL''IN'N alloys calculations based on LDA-1/2 approach (2011)

    Pelá, R R; Ferreira, L G; Caetano, C; Marques, M; Furthmüller, J; Teles, L K

    Source: Applied physics letters. Unidade: IF

    Assunto: ALTA TEMPERATURA

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    • ABNT

      PELÁ, R R et al. Accurate band gaps of 'AL''GA'N, 'IN''GA'N, and 'AL''IN'N alloys calculations based on LDA-1/2 approach. Applied physics letters, v. 98, n. 15, p. 151907, 2011Tradução . . Disponível em: https://doi.org/10.1063/1.3576570. Acesso em: 12 jun. 2024.

    • APA

      Pelá, R. R., Ferreira, L. G., Caetano, C., Marques, M., Furthmüller, J., & Teles, L. K. (2011). Accurate band gaps of 'AL''GA'N, 'IN''GA'N, and 'AL''IN'N alloys calculations based on LDA-1/2 approach. Applied physics letters, 98( 15), 151907. doi:10.1063/1.3576570

    • NLM

      Pelá RR, Ferreira LG, Caetano C, Marques M, Furthmüller J, Teles LK. Accurate band gaps of 'AL''GA'N, 'IN''GA'N, and 'AL''IN'N alloys calculations based on LDA-1/2 approach [Internet]. Applied physics letters. 2011 ;98( 15): 151907.[citado 2024 jun. 12 ] Available from: https://doi.org/10.1063/1.3576570

    • Vancouver

      Pelá RR, Ferreira LG, Caetano C, Marques M, Furthmüller J, Teles LK. Accurate band gaps of 'AL''GA'N, 'IN''GA'N, and 'AL''IN'N alloys calculations based on LDA-1/2 approach [Internet]. Applied physics letters. 2011 ;98( 15): 151907.[citado 2024 jun. 12 ] Available from: https://doi.org/10.1063/1.3576570
  • 1

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