ReP USP - Resultado da busca

Artigo de periodico
Behavior of carriers in quantum wells in 'GA''AS'-'AL IND.X''GA IND.1-X''AS' superlattices under in-plane magnetic fields (1986)
Leite, J. R.; Oliveira, G M G; Gomes, V M S; Chaves, A S
Source: International Journal of Quantum Chemistry. Symposium. Unidade: IF
Assunto: CAMPO MAGNÉTICO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
LEITE, J. R. et al. Behavior of carriers in quantum wells in 'GA''AS'-'AL IND.X''GA IND.1-X''AS' superlattices under in-plane magnetic fields. International Journal of Quantum Chemistry. Symposium, v. 20, p. 335-46, 1986Tradução . . Acesso em: 07 jun. 2024.
APA
Leite, J. R., Oliveira, G. M. G., Gomes, V. M. S., & Chaves, A. S. (1986). Behavior of carriers in quantum wells in 'GA''AS'-'AL IND.X''GA IND.1-X''AS' superlattices under in-plane magnetic fields. International Journal of Quantum Chemistry. Symposium, 20, 335-46.
NLM
Leite JR, Oliveira GMG, Gomes VMS, Chaves AS. Behavior of carriers in quantum wells in 'GA''AS'-'AL IND.X''GA IND.1-X''AS' superlattices under in-plane magnetic fields. International Journal of Quantum Chemistry. Symposium. 1986 ;20 335-46.[citado 2024 jun. 07 ]
Vancouver
Leite JR, Oliveira GMG, Gomes VMS, Chaves AS. Behavior of carriers in quantum wells in 'GA''AS'-'AL IND.X''GA IND.1-X''AS' superlattices under in-plane magnetic fields. International Journal of Quantum Chemistry. Symposium. 1986 ;20 335-46.[citado 2024 jun. 07 ]
Artigo de periodico
Ab-initio mo electronic structure calculations of defect-pair complexes in silicon (1986)
Gomes, V M S; Assali, L. V. C. ; Leite, J. R.
Source: International Journal of Quantum Chemistry. Symposium. Unidade: IF
Assunto: ESTRUTURA ELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GOMES, V M S e ASSALI, L. V. C. e LEITE, J. R. Ab-initio mo electronic structure calculations of defect-pair complexes in silicon. International Journal of Quantum Chemistry. Symposium, v. 20, p. 749-61, 1986Tradução . . Disponível em: https://doi.org/10.1002/qua.560300764. Acesso em: 07 jun. 2024.
APA
Gomes, V. M. S., Assali, L. V. C., & Leite, J. R. (1986). Ab-initio mo electronic structure calculations of defect-pair complexes in silicon. International Journal of Quantum Chemistry. Symposium, 20, 749-61. doi:10.1002/qua.560300764
NLM
Gomes VMS, Assali LVC, Leite JR. Ab-initio mo electronic structure calculations of defect-pair complexes in silicon [Internet]. International Journal of Quantum Chemistry. Symposium. 1986 ;20 749-61.[citado 2024 jun. 07 ] Available from: https://doi.org/10.1002/qua.560300764
Vancouver
Gomes VMS, Assali LVC, Leite JR. Ab-initio mo electronic structure calculations of defect-pair complexes in silicon [Internet]. International Journal of Quantum Chemistry. Symposium. 1986 ;20 749-61.[citado 2024 jun. 07 ] Available from: https://doi.org/10.1002/qua.560300764
Artigo de periodico
Application of the variational cellular method to semiconductors: the 'ZNS' case (1986)
Ferreira, L G; Siqueira, M L
Source: International Journal of Quantum Chemistry. Symposium. Unidade: IF
Assunto: SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
FERREIRA, L G e SIQUEIRA, M L. Application of the variational cellular method to semiconductors: the 'ZNS' case. International Journal of Quantum Chemistry. Symposium, v. 20, p. 313-23, 1986Tradução . . Disponível em: https://doi.org/10.1002/qua.560300729. Acesso em: 07 jun. 2024.
APA
Ferreira, L. G., & Siqueira, M. L. (1986). Application of the variational cellular method to semiconductors: the 'ZNS' case. International Journal of Quantum Chemistry. Symposium, 20, 313-23. doi:10.1002/qua.560300729
NLM
Ferreira LG, Siqueira ML. Application of the variational cellular method to semiconductors: the 'ZNS' case [Internet]. International Journal of Quantum Chemistry. Symposium. 1986 ;20 313-23.[citado 2024 jun. 07 ] Available from: https://doi.org/10.1002/qua.560300729
Vancouver
Ferreira LG, Siqueira ML. Application of the variational cellular method to semiconductors: the 'ZNS' case [Internet]. International Journal of Quantum Chemistry. Symposium. 1986 ;20 313-23.[citado 2024 jun. 07 ] Available from: https://doi.org/10.1002/qua.560300729
Artigo de periodico
Noble gas atoms as impurities in silicon (1986)
Chachan, H; Alves, J L A; Siqueira, M L; Leite, J. R.
Source: International Journal of Quantum Chemistry. Symposium. Unidade: IF
Assunto: FÍSICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
CHACHAN, H et al. Noble gas atoms as impurities in silicon. International Journal of Quantum Chemistry. Symposium, v. 20, p. 347-51, 1986Tradução . . Acesso em: 07 jun. 2024.
APA
Chachan, H., Alves, J. L. A., Siqueira, M. L., & Leite, J. R. (1986). Noble gas atoms as impurities in silicon. International Journal of Quantum Chemistry. Symposium, 20, 347-51.
NLM
Chachan H, Alves JLA, Siqueira ML, Leite JR. Noble gas atoms as impurities in silicon. International Journal of Quantum Chemistry. Symposium. 1986 ;20 347-51.[citado 2024 jun. 07 ]
Vancouver
Chachan H, Alves JLA, Siqueira ML, Leite JR. Noble gas atoms as impurities in silicon. International Journal of Quantum Chemistry. Symposium. 1986 ;20 347-51.[citado 2024 jun. 07 ]

USP Schools

ReP

Filtros

Authors