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Trabalho de evento
Controlled motion in microbridges of silicon carbide obtained by PECVD (2004)
Rehder, Gustavo Pamplona ; Paez Carreño, Marcelo Nelson
Source: Microelectronics Technology and Devices SBMicro 2004. Proceedings, v. 2004-03. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO 2004. Unidade: EP
Subjects: MICROELETRÔNICA, FILMES FINOS, ELETROQUÍMICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
REHDER, Gustavo Pamplona e PAEZ CARREÑO, Marcelo Nelson. Controlled motion in microbridges of silicon carbide obtained by PECVD. 2004, Anais.. Pennington: The Electrochemical Society, 2004. . Acesso em: 06 jun. 2024.
APA
Rehder, G. P., & Paez Carreño, M. N. (2004). Controlled motion in microbridges of silicon carbide obtained by PECVD. In Microelectronics Technology and Devices SBMicro 2004. Proceedings, v. 2004-03. Pennington: The Electrochemical Society.
NLM
Rehder GP, Paez Carreño MN. Controlled motion in microbridges of silicon carbide obtained by PECVD. Microelectronics Technology and Devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2024 jun. 06 ]
Vancouver
Rehder GP, Paez Carreño MN. Controlled motion in microbridges of silicon carbide obtained by PECVD. Microelectronics Technology and Devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2024 jun. 06 ]
Trabalho de evento
Characteristics of polymcrystalline SI1-xGEx alloy deposited in a vertical LPCVD system (2004)
Teixeira, Ricardo C.; Doi, Ioshiaki; Swart, Jacobus Willibrordus; Zakia, M. B. P.; Santos Filho, Sebastião Gomes dos
Source: Microelectronics Technology and Devices SBMicro 2004. Proceedings, v. 2004-03. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Subjects: MICROELETRÔNICA, POLÍMEROS (MATERIAIS)
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
TEIXEIRA, Ricardo C. et al. Characteristics of polymcrystalline SI1-xGEx alloy deposited in a vertical LPCVD system. 2004, Anais.. Pennington: The Electrochemical Society, 2004. . Acesso em: 06 jun. 2024.
APA
Teixeira, R. C., Doi, I., Swart, J. W., Zakia, M. B. P., & Santos Filho, S. G. dos. (2004). Characteristics of polymcrystalline SI1-xGEx alloy deposited in a vertical LPCVD system. In Microelectronics Technology and Devices SBMicro 2004. Proceedings, v. 2004-03. Pennington: The Electrochemical Society.
NLM
Teixeira RC, Doi I, Swart JW, Zakia MBP, Santos Filho SG dos. Characteristics of polymcrystalline SI1-xGEx alloy deposited in a vertical LPCVD system. Microelectronics Technology and Devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2024 jun. 06 ]
Vancouver
Teixeira RC, Doi I, Swart JW, Zakia MBP, Santos Filho SG dos. Characteristics of polymcrystalline SI1-xGEx alloy deposited in a vertical LPCVD system. Microelectronics Technology and Devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2024 jun. 06 ]
Trabalho de evento
The influence of the AC component of the plasma potential on the measurement of the ion flux (2004)
Swart, Jacobus Willibrordus; Verdonck, Patrick Bernard
Source: Microelectronics Technology and Devices SBMicro 2004. Proceedings, v. 2004-03. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Subjects: MICROELETRÔNICA, CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SWART, Jacobus Willibrordus e VERDONCK, Patrick Bernard. The influence of the AC component of the plasma potential on the measurement of the ion flux. 2004, Anais.. Pennington: The Electrochemical Society, 2004. . Acesso em: 06 jun. 2024.
APA
Swart, J. W., & Verdonck, P. B. (2004). The influence of the AC component of the plasma potential on the measurement of the ion flux. In Microelectronics Technology and Devices SBMicro 2004. Proceedings, v. 2004-03. Pennington: The Electrochemical Society.
NLM
Swart JW, Verdonck PB. The influence of the AC component of the plasma potential on the measurement of the ion flux. Microelectronics Technology and Devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2024 jun. 06 ]
Vancouver
Swart JW, Verdonck PB. The influence of the AC component of the plasma potential on the measurement of the ion flux. Microelectronics Technology and Devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2024 jun. 06 ]

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