Pavanello, Marcelo Antonio 
; Martino, João Antonio ; Simoen, Eddy ; Mercha, A.; Claeys, Cor ; Van Meer, H.; De Meyer, K.
Source: Silicon-on-Insulator Technology and Devices XI.. Conference titles: International Symposium on SOI Technology and Devices. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
PAVANELLO, Marcelo Antonio et al. Analysis of HALO implant influence on the self-heating and self-heating enhanced impact ionization on 0.13 Mm floating-body partially-depleted SOI MOSFET at low temperature. Silicon-on-Insulator Technology and Devices XI. Tradução . Pennington: The Electrochemical Society, 2003. . . Acesso em: 03 jun. 2024.APA
Pavanello, M. A., Martino, J. A., Simoen, E., Mercha, A., Claeys, C., Van Meer, H., & De Meyer, K. (2003). Analysis of HALO implant influence on the self-heating and self-heating enhanced impact ionization on 0.13 Mm floating-body partially-depleted SOI MOSFET at low temperature. In Silicon-on-Insulator Technology and Devices XI.. Pennington: The Electrochemical Society.NLM
Pavanello MA, Martino JA, Simoen E, Mercha A, Claeys C, Van Meer H, De Meyer K. Analysis of HALO implant influence on the self-heating and self-heating enhanced impact ionization on 0.13 Mm floating-body partially-depleted SOI MOSFET at low temperature. In: Silicon-on-Insulator Technology and Devices XI. Pennington: The Electrochemical Society; 2003. [citado 2024 jun. 03 ]Vancouver
Pavanello MA, Martino JA, Simoen E, Mercha A, Claeys C, Van Meer H, De Meyer K. Analysis of HALO implant influence on the self-heating and self-heating enhanced impact ionization on 0.13 Mm floating-body partially-depleted SOI MOSFET at low temperature. In: Silicon-on-Insulator Technology and Devices XI. Pennington: The Electrochemical Society; 2003. [citado 2024 jun. 03 ]
