Martino, João Antonio 
; Rafi, J.M.; Mercha, A.; Simoen, Eddy ; Claeys, Cor
Source: 8. Symposium on High Purity Silicon: proceedings. Conference titles: Symposium on High Purity Silicon. Unidade: EP
Subjects: MICROELETRÔNICA, CIRCUITOS INTEGRADOS
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MARTINO, João Antonio et al. Temperature influence on the generation lifetime determination based on drain current transients in partially depleted SOI nMOSFETs. 8. Symposium on High Purity Silicon: proceedings. Tradução . Pennington: The Electrochemical Society, 2004. . . Acesso em: 03 jun. 2024.APA
Martino, J. A., Rafi, J. M., Mercha, A., Simoen, E., & Claeys, C. (2004). Temperature influence on the generation lifetime determination based on drain current transients in partially depleted SOI nMOSFETs. In 8. Symposium on High Purity Silicon: proceedings. Pennington: The Electrochemical Society.NLM
Martino JA, Rafi JM, Mercha A, Simoen E, Claeys C. Temperature influence on the generation lifetime determination based on drain current transients in partially depleted SOI nMOSFETs. In: 8. Symposium on High Purity Silicon: proceedings. Pennington: The Electrochemical Society; 2004. [citado 2024 jun. 03 ]Vancouver
Martino JA, Rafi JM, Mercha A, Simoen E, Claeys C. Temperature influence on the generation lifetime determination based on drain current transients in partially depleted SOI nMOSFETs. In: 8. Symposium on High Purity Silicon: proceedings. Pennington: The Electrochemical Society; 2004. [citado 2024 jun. 03 ]
