ReP USP - Resultado da busca

Trabalho de evento
Optical properties of porous silicon for gas sensors application (2002)
Salcedo, Walter Jaimes ; Ramírez Fernandez, Francisco Javier ; Rubim, Joel Camargo
Fonte: IBERSENSOR 2002. Nome do evento: Congreso Iberoamericano de Sensores y Biosensores. Unidades: EP, IQ
Assunto: SENSORES ÓTICOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SALCEDO, Walter Jaimes e RAMÍREZ FERNANDEZ, Francisco Javier e RUBIM, Joel Camargo. Optical properties of porous silicon for gas sensors application. 2002, Anais.. Lima: Pontifícia Universidad Católica del Perú, 2002. . Acesso em: 22 abr. 2024.
APA
Salcedo, W. J., Ramírez Fernandez, F. J., & Rubim, J. C. (2002). Optical properties of porous silicon for gas sensors application. In IBERSENSOR 2002. Lima: Pontifícia Universidad Católica del Perú.
NLM
Salcedo WJ, Ramírez Fernandez FJ, Rubim JC. Optical properties of porous silicon for gas sensors application. IBERSENSOR 2002. 2002 ;[citado 2024 abr. 22 ]
Vancouver
Salcedo WJ, Ramírez Fernandez FJ, Rubim JC. Optical properties of porous silicon for gas sensors application. IBERSENSOR 2002. 2002 ;[citado 2024 abr. 22 ]
Artigo de periodico
Changes in the porous silicon structure induced by laser radiation (2001)
Salcedo, Walter Jaimes ; Ramírez Fernandez, Francisco Javier ; Rubim, Joel Camargo
Fonte: Journal of Raman Spectroscopy. Unidades: EP, IQ
Assuntos: QUÍMICA ANALÍTICA, LUMINESCÊNCIA, ESPECTROSCOPIA RAMAN, FOTOLUMINESCÊNCIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SALCEDO, Walter Jaimes e RAMÍREZ FERNANDEZ, Francisco Javier e RUBIM, Joel Camargo. Changes in the porous silicon structure induced by laser radiation. Journal of Raman Spectroscopy, v. 32, n. 3, p. 151-157, 2001Tradução . . Disponível em: https://doi.org/10.1002/jrs.668. Acesso em: 22 abr. 2024.
APA
Salcedo, W. J., Ramírez Fernandez, F. J., & Rubim, J. C. (2001). Changes in the porous silicon structure induced by laser radiation. Journal of Raman Spectroscopy, 32( 3), 151-157. doi:10.1002/jrs.668
NLM
Salcedo WJ, Ramírez Fernandez FJ, Rubim JC. Changes in the porous silicon structure induced by laser radiation [Internet]. Journal of Raman Spectroscopy. 2001 ; 32( 3): 151-157.[citado 2024 abr. 22 ] Available from: https://doi.org/10.1002/jrs.668
Vancouver
Salcedo WJ, Ramírez Fernandez FJ, Rubim JC. Changes in the porous silicon structure induced by laser radiation [Internet]. Journal of Raman Spectroscopy. 2001 ; 32( 3): 151-157.[citado 2024 abr. 22 ] Available from: https://doi.org/10.1002/jrs.668
Artigo de periodico
Polarization effects on the Raman and photoluminescence spectra of porous silicon layers (1999)
Salcedo, Walter Jaimes ; Ramírez Fernandez, Francisco Javier ; Rubim, Joel Camargo
Fonte: Journal of Raman Spectroscopy. Unidades: EP, IQ
Assunto: DISPOSITIVOS ELETRÔNICOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SALCEDO, Walter Jaimes e RAMÍREZ FERNANDEZ, Francisco Javier e RUBIM, Joel Camargo. Polarization effects on the Raman and photoluminescence spectra of porous silicon layers. Journal of Raman Spectroscopy, v. 30, p. 29-36, 1999Tradução . . Disponível em: https://doi.org/10.1002/(sici)1097-4555(199901)30:1%3C29::aid-jrs337%3E3.0.co;2-p. Acesso em: 22 abr. 2024.
APA
Salcedo, W. J., Ramírez Fernandez, F. J., & Rubim, J. C. (1999). Polarization effects on the Raman and photoluminescence spectra of porous silicon layers. Journal of Raman Spectroscopy, 30, 29-36. doi:10.1002/(sici)1097-4555(199901)30:1%3C29::aid-jrs337%3E3.0.co;2-p
NLM
Salcedo WJ, Ramírez Fernandez FJ, Rubim JC. Polarization effects on the Raman and photoluminescence spectra of porous silicon layers [Internet]. Journal of Raman Spectroscopy. 1999 ; 30 29-36.[citado 2024 abr. 22 ] Available from: https://doi.org/10.1002/(sici)1097-4555(199901)30:1%3C29::aid-jrs337%3E3.0.co;2-p
Vancouver
Salcedo WJ, Ramírez Fernandez FJ, Rubim JC. Polarization effects on the Raman and photoluminescence spectra of porous silicon layers [Internet]. Journal of Raman Spectroscopy. 1999 ; 30 29-36.[citado 2024 abr. 22 ] Available from: https://doi.org/10.1002/(sici)1097-4555(199901)30:1%3C29::aid-jrs337%3E3.0.co;2-p
Artigo de periodico
Influence of layer excitation on Raman and photoluminescence spectra and FTIR study of porous silicon layers (1999)
Salcedo, Walter Jaimes ; Ramírez Fernandez, Francisco Javier ; Rubim, Joel Camargo
Fonte: Brazilian Journal of Physics. Unidades: EP, IQ
Assunto: DISPOSITIVOS ELETRÔNICOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SALCEDO, Walter Jaimes e RAMÍREZ FERNANDEZ, Francisco Javier e RUBIM, Joel Camargo. Influence of layer excitation on Raman and photoluminescence spectra and FTIR study of porous silicon layers. Brazilian Journal of Physics, v. 29, n. 4, 1999Tradução . . Disponível em: https://doi.org/10.1590/s0103-97331999000400028. Acesso em: 22 abr. 2024.
APA
Salcedo, W. J., Ramírez Fernandez, F. J., & Rubim, J. C. (1999). Influence of layer excitation on Raman and photoluminescence spectra and FTIR study of porous silicon layers. Brazilian Journal of Physics, 29( 4). doi:10.1590/s0103-97331999000400028
NLM
Salcedo WJ, Ramírez Fernandez FJ, Rubim JC. Influence of layer excitation on Raman and photoluminescence spectra and FTIR study of porous silicon layers [Internet]. Brazilian Journal of Physics. 1999 ; 29( 4):[citado 2024 abr. 22 ] Available from: https://doi.org/10.1590/s0103-97331999000400028
Vancouver
Salcedo WJ, Ramírez Fernandez FJ, Rubim JC. Influence of layer excitation on Raman and photoluminescence spectra and FTIR study of porous silicon layers [Internet]. Brazilian Journal of Physics. 1999 ; 29( 4):[citado 2024 abr. 22 ] Available from: https://doi.org/10.1590/s0103-97331999000400028
Trabalho de evento
Polarization effect on Raman scattering and photoluminescence spectra in porous silicon layer. (em CD-ROM) (1997)
Salcedo, Walter Jaimes ; Ramírez Fernandez, Francisco Javier ; Rubim, Joel Camargo; Matz, M
Fonte: Proceedings. Nome do evento: Conference of the Brazilian Microelectronics Society. Unidades: EP, IQ
Assuntos: CIRCUITOS INTEGRADOS, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SALCEDO, Walter Jaimes et al. Polarization effect on Raman scattering and photoluminescence spectra in porous silicon layer. (em CD-ROM). 1997, Anais.. Itajubá: SBMICRO/EFEI, 1997. . Acesso em: 22 abr. 2024.
APA
Salcedo, W. J., Ramírez Fernandez, F. J., Rubim, J. C., & Matz, M. (1997). Polarization effect on Raman scattering and photoluminescence spectra in porous silicon layer. (em CD-ROM). In Proceedings. Itajubá: SBMICRO/EFEI.
NLM
Salcedo WJ, Ramírez Fernandez FJ, Rubim JC, Matz M. Polarization effect on Raman scattering and photoluminescence spectra in porous silicon layer. (em CD-ROM). Proceedings. 1997 ;[citado 2024 abr. 22 ]
Vancouver
Salcedo WJ, Ramírez Fernandez FJ, Rubim JC, Matz M. Polarization effect on Raman scattering and photoluminescence spectra in porous silicon layer. (em CD-ROM). Proceedings. 1997 ;[citado 2024 abr. 22 ]

Unidades USP

ReP

Filtros

Assuntos

Indexado em