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Filtros : "EP" "2015" "Agopian, Paula Ghedini Der" Removido: "- Engenharia Mecânica de Projeto e Fabricação" Limpar

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  • Artigo de periodico

    Different stress techniques and their efficiency on triple-gate SOI n-MOSFETs (2015)

    Bühler, Rudolf Theoderich; Agopian, Paula Ghedini Der ; Collaert, Nadine ; Simoen, Eddy ; Claeys, Cor ; Martino, João Antonio

    Fonte: Solid-State Electronics. Unidade: EP

    Assunto: MICROELETRÔNICA

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    • ABNT

      BÜHLER, Rudolf Theoderich et al. Different stress techniques and their efficiency on triple-gate SOI n-MOSFETs. Solid-State Electronics, v. 103, p. 209-215, 2015Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2014.07.010. Acesso em: 16 abr. 2024.

    • APA

      Bühler, R. T., Agopian, P. G. D., Collaert, N., Simoen, E., Claeys, C., & Martino, J. A. (2015). Different stress techniques and their efficiency on triple-gate SOI n-MOSFETs. Solid-State Electronics, 103, 209-215. doi:10.1016/j.sse.2014.07.010

    • NLM

      Bühler RT, Agopian PGD, Collaert N, Simoen E, Claeys C, Martino JA. Different stress techniques and their efficiency on triple-gate SOI n-MOSFETs [Internet]. Solid-State Electronics. 2015 ;103 209-215.[citado 2024 abr. 16 ] Available from: https://doi.org/10.1016/j.sse.2014.07.010

    • Vancouver

      Bühler RT, Agopian PGD, Collaert N, Simoen E, Claeys C, Martino JA. Different stress techniques and their efficiency on triple-gate SOI n-MOSFETs [Internet]. Solid-State Electronics. 2015 ;103 209-215.[citado 2024 abr. 16 ] Available from: https://doi.org/10.1016/j.sse.2014.07.010

  • Artigo de periodico

    Influence of the Source Composition on the Analog Performance Parameters of Vertical Nanowire-TFETs (2015)

    Agopian, Paula Ghedini Der ; Martino, João Antonio ; Santos, Sara Dereste dos; Rooyackers, Rita; Vandoren, A

    Fonte: IEEE Transactions on Electron Devices. Unidade: EP

    Assuntos: MICROELETRÔNICA, TRANSISTORES, SILÍCIO

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    • ABNT

      AGOPIAN, Paula Ghedini Der et al. Influence of the Source Composition on the Analog Performance Parameters of Vertical Nanowire-TFETs. IEEE Transactions on Electron Devices, v. 62, n. Ja 2015, p. 16-22, 2015Tradução . . Disponível em: https://doi.org/10.1109/ted.2014.2367659. Acesso em: 16 abr. 2024.

    • APA

      Agopian, P. G. D., Martino, J. A., Santos, S. D. dos, Rooyackers, R., & Vandoren, A. (2015). Influence of the Source Composition on the Analog Performance Parameters of Vertical Nanowire-TFETs. IEEE Transactions on Electron Devices, 62( Ja 2015), 16-22. doi:10.1109/ted.2014.2367659

    • NLM

      Agopian PGD, Martino JA, Santos SD dos, Rooyackers R, Vandoren A. Influence of the Source Composition on the Analog Performance Parameters of Vertical Nanowire-TFETs [Internet]. IEEE Transactions on Electron Devices. 2015 ; 62( Ja 2015): 16-22.[citado 2024 abr. 16 ] Available from: https://doi.org/10.1109/ted.2014.2367659

    • Vancouver

      Agopian PGD, Martino JA, Santos SD dos, Rooyackers R, Vandoren A. Influence of the Source Composition on the Analog Performance Parameters of Vertical Nanowire-TFETs [Internet]. IEEE Transactions on Electron Devices. 2015 ; 62( Ja 2015): 16-22.[citado 2024 abr. 16 ] Available from: https://doi.org/10.1109/ted.2014.2367659

  • Artigo de periodico

    Analog performance of vertical nanowire TFETs as a function of temperature and transport mechanism (2015)

    Martino, Márcio Dalla Valle; Thean, Aaron; Claeys, Cor ; Neves, Felipe S; Agopian, Paula Ghedini Der ; Martino, João Antonio ; Vandooren, A; Rooyackers, Rita; Simoen, Eddy

    Fonte: Solid-State Electronics. Unidade: EP

    Assuntos: TRANSISTORES, MICROELETRÔNICA

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    • ABNT

      MARTINO, Márcio Dalla Valle et al. Analog performance of vertical nanowire TFETs as a function of temperature and transport mechanism. Solid-State Electronics, v. 112, p. 51-55, 2015Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2015.02.006. Acesso em: 16 abr. 2024.

    • APA

      Martino, M. D. V., Thean, A., Claeys, C., Neves, F. S., Agopian, P. G. D., Martino, J. A., et al. (2015). Analog performance of vertical nanowire TFETs as a function of temperature and transport mechanism. Solid-State Electronics, 112, 51-55. doi:10.1016/j.sse.2015.02.006

    • NLM

      Martino MDV, Thean A, Claeys C, Neves FS, Agopian PGD, Martino JA, Vandooren A, Rooyackers R, Simoen E. Analog performance of vertical nanowire TFETs as a function of temperature and transport mechanism [Internet]. Solid-State Electronics. 2015 ; 112 51-55.[citado 2024 abr. 16 ] Available from: https://doi.org/10.1016/j.sse.2015.02.006

    • Vancouver

      Martino MDV, Thean A, Claeys C, Neves FS, Agopian PGD, Martino JA, Vandooren A, Rooyackers R, Simoen E. Analog performance of vertical nanowire TFETs as a function of temperature and transport mechanism [Internet]. Solid-State Electronics. 2015 ; 112 51-55.[citado 2024 abr. 16 ] Available from: https://doi.org/10.1016/j.sse.2015.02.006
  • 1

1 - 3 (3 registros)

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