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Trabalho de evento-resumo
Photoluminescence of radial heterostrutured GaAs/AlGaAs/GaAs nanowires (2013)
Pusep, Yuri A.; Guimarães, Francisco Eduardo Gontijo; Caface, R. A.; Arakaki, Haroldo; Souza, Carlos Alberto de
Source: Abstracts. Conference titles: International Conference on Optics of Excitons in Confined Systems - OECS. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, MATERIAIS NANOESTRUTURADOS, ESPECTROSCOPIA RAMAN
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PUSEP, Yuri A. et al. Photoluminescence of radial heterostrutured GaAs/AlGaAs/GaAs nanowires. 2013, Anais.. Rome: University of Rome II Tor Vergata, 2013. Disponível em: http://www.mifp.eu/OECS13/images/modules/OECS_2013_light.pdf. Acesso em: 19 abr. 2024.
APA
Pusep, Y. A., Guimarães, F. E. G., Caface, R. A., Arakaki, H., & Souza, C. A. de. (2013). Photoluminescence of radial heterostrutured GaAs/AlGaAs/GaAs nanowires. In Abstracts. Rome: University of Rome II Tor Vergata. Recuperado de http://www.mifp.eu/OECS13/images/modules/OECS_2013_light.pdf
NLM
Pusep YA, Guimarães FEG, Caface RA, Arakaki H, Souza CA de. Photoluminescence of radial heterostrutured GaAs/AlGaAs/GaAs nanowires [Internet]. Abstracts. 2013 ;[citado 2024 abr. 19 ] Available from: http://www.mifp.eu/OECS13/images/modules/OECS_2013_light.pdf
Vancouver
Pusep YA, Guimarães FEG, Caface RA, Arakaki H, Souza CA de. Photoluminescence of radial heterostrutured GaAs/AlGaAs/GaAs nanowires [Internet]. Abstracts. 2013 ;[citado 2024 abr. 19 ] Available from: http://www.mifp.eu/OECS13/images/modules/OECS_2013_light.pdf
Artigo de periodico
Photoluminescence of radial heterostructured GaAs/AlGaAs/GaAs nanowires (2013)
Caface, R. A.; Guimarães, Francisco Eduardo Gontijo; Arakaki, Haroldo; Souza, Carlos Alberto de; Pusep, Yuri A.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, MATERIAIS NANOESTRUTURADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
CAFACE, R. A. et al. Photoluminescence of radial heterostructured GaAs/AlGaAs/GaAs nanowires. Journal of Applied Physics, v. 113, n. 6, p. 064315-1-064315-4, 2013Tradução . . Disponível em: https://doi.org/10.1063/1.4792301. Acesso em: 19 abr. 2024.
APA
Caface, R. A., Guimarães, F. E. G., Arakaki, H., Souza, C. A. de, & Pusep, Y. A. (2013). Photoluminescence of radial heterostructured GaAs/AlGaAs/GaAs nanowires. Journal of Applied Physics, 113( 6), 064315-1-064315-4. doi:10.1063/1.4792301
NLM
Caface RA, Guimarães FEG, Arakaki H, Souza CA de, Pusep YA. Photoluminescence of radial heterostructured GaAs/AlGaAs/GaAs nanowires [Internet]. Journal of Applied Physics. 2013 ; 113( 6): 064315-1-064315-4.[citado 2024 abr. 19 ] Available from: https://doi.org/10.1063/1.4792301
Vancouver
Caface RA, Guimarães FEG, Arakaki H, Souza CA de, Pusep YA. Photoluminescence of radial heterostructured GaAs/AlGaAs/GaAs nanowires [Internet]. Journal of Applied Physics. 2013 ; 113( 6): 064315-1-064315-4.[citado 2024 abr. 19 ] Available from: https://doi.org/10.1063/1.4792301
Trabalho de evento-resumo
Photoluminescence of radial heterostructured GaAs/AIGaAs/GaAs nanowires (2014)
Pusep, Yuri A.; Guimarães, Francisco Eduardo Gontijo; Caface, Raphael; Arakaki, Haroldo; Souza, Carlos Alberto de
Source: Abstracts. Conference titles: International Conference on the Physics of Semiconductors - ICPS. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PUSEP, Yuri A. et al. Photoluminescence of radial heterostructured GaAs/AIGaAs/GaAs nanowires. 2014, Anais.. London: International Union of Pure and Applied Physics - IUPAP, 2014. Disponível em: http://www.icps2014.org/abstracts/Posters_Optical_Properties_of_Heterostructures_B.pdf. Acesso em: 19 abr. 2024.
APA
Pusep, Y. A., Guimarães, F. E. G., Caface, R., Arakaki, H., & Souza, C. A. de. (2014). Photoluminescence of radial heterostructured GaAs/AIGaAs/GaAs nanowires. In Abstracts. London: International Union of Pure and Applied Physics - IUPAP. Recuperado de http://www.icps2014.org/abstracts/Posters_Optical_Properties_of_Heterostructures_B.pdf
NLM
Pusep YA, Guimarães FEG, Caface R, Arakaki H, Souza CA de. Photoluminescence of radial heterostructured GaAs/AIGaAs/GaAs nanowires [Internet]. Abstracts. 2014 ;[citado 2024 abr. 19 ] Available from: http://www.icps2014.org/abstracts/Posters_Optical_Properties_of_Heterostructures_B.pdf
Vancouver
Pusep YA, Guimarães FEG, Caface R, Arakaki H, Souza CA de. Photoluminescence of radial heterostructured GaAs/AIGaAs/GaAs nanowires [Internet]. Abstracts. 2014 ;[citado 2024 abr. 19 ] Available from: http://www.icps2014.org/abstracts/Posters_Optical_Properties_of_Heterostructures_B.pdf
Trabalho de evento-anais periodico
Effect of the electron and hole scattering potentials compensation on optical band edge of heavily doped GaAs/AlGaAs superlattices (2005)
Pusep, Yuri A.; Guimarães, Francisco Eduardo Gontijo; Ribeiro, M. B.; Arakaki, Haroldo; Souza, Carlos Alberto de; Malzer, S.; Döhler, G. H.
Source: AIP Conference Proceedings. Conference titles: International Conference on the Physics of Semiconductors - ICPS. Unidade: IFSC
Subjects: SEMICONDUTORES, FOTOLUMINESCÊNCIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PUSEP, Yuri A. et al. Effect of the electron and hole scattering potentials compensation on optical band edge of heavily doped GaAs/AlGaAs superlattices. AIP Conference Proceedings. Melville: American Institute of Physics - AIP. Disponível em: https://doi.org/10.1063/1.1994427. Acesso em: 19 abr. 2024. , 2005
APA
Pusep, Y. A., Guimarães, F. E. G., Ribeiro, M. B., Arakaki, H., Souza, C. A. de, Malzer, S., & Döhler, G. H. (2005). Effect of the electron and hole scattering potentials compensation on optical band edge of heavily doped GaAs/AlGaAs superlattices. AIP Conference Proceedings. Melville: American Institute of Physics - AIP. doi:10.1063/1.1994427
NLM
Pusep YA, Guimarães FEG, Ribeiro MB, Arakaki H, Souza CA de, Malzer S, Döhler GH. Effect of the electron and hole scattering potentials compensation on optical band edge of heavily doped GaAs/AlGaAs superlattices [Internet]. AIP Conference Proceedings. 2005 ; 772( 1): 959-960.[citado 2024 abr. 19 ] Available from: https://doi.org/10.1063/1.1994427
Vancouver
Pusep YA, Guimarães FEG, Ribeiro MB, Arakaki H, Souza CA de, Malzer S, Döhler GH. Effect of the electron and hole scattering potentials compensation on optical band edge of heavily doped GaAs/AlGaAs superlattices [Internet]. AIP Conference Proceedings. 2005 ; 772( 1): 959-960.[citado 2024 abr. 19 ] Available from: https://doi.org/10.1063/1.1994427
Artigo de periodico
Dynamics of photoexcited carriers in the presence of disorder in radial heterostructured GaAs/AlGaAs/GaAs nanowires (2013)
Guimarães, Francisco Eduardo Gontijo; Caface, R. A.; Arakaki, Haroldo; Souza, Carlos Alberto de; Pusep, Yuri A.
Source: Applied Physics Letters. Unidade: IFSC
Subjects: NANOTECNOLOGIA, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GUIMARÃES, Francisco Eduardo Gontijo et al. Dynamics of photoexcited carriers in the presence of disorder in radial heterostructured GaAs/AlGaAs/GaAs nanowires. Applied Physics Letters, v. 103, n. 3, p. 033121-1-033121-3, 2013Tradução . . Disponível em: https://doi.org/10.1063/1.4816288. Acesso em: 19 abr. 2024.
APA
Guimarães, F. E. G., Caface, R. A., Arakaki, H., Souza, C. A. de, & Pusep, Y. A. (2013). Dynamics of photoexcited carriers in the presence of disorder in radial heterostructured GaAs/AlGaAs/GaAs nanowires. Applied Physics Letters, 103( 3), 033121-1-033121-3. doi:10.1063/1.4816288
NLM
Guimarães FEG, Caface RA, Arakaki H, Souza CA de, Pusep YA. Dynamics of photoexcited carriers in the presence of disorder in radial heterostructured GaAs/AlGaAs/GaAs nanowires [Internet]. Applied Physics Letters. 2013 ; 103( 3): 033121-1-033121-3.[citado 2024 abr. 19 ] Available from: https://doi.org/10.1063/1.4816288
Vancouver
Guimarães FEG, Caface RA, Arakaki H, Souza CA de, Pusep YA. Dynamics of photoexcited carriers in the presence of disorder in radial heterostructured GaAs/AlGaAs/GaAs nanowires [Internet]. Applied Physics Letters. 2013 ; 103( 3): 033121-1-033121-3.[citado 2024 abr. 19 ] Available from: https://doi.org/10.1063/1.4816288

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