Defect induced room temperature ferromagnetism in high quality Co-doped ZnO bulk samples (2020)
Unidade: IFSubjects: SEMICONDUTORES (FÍSICO-QUÍMICA), FÍSICA DA MATÉRIA CONDENSADA, FERROMAGNETISMO, SPINTRÔNICA
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GODOY, M. P. F. de et al. Defect induced room temperature ferromagnetism in high quality Co-doped ZnO bulk samples. . São Paulo: Instituto de Física, Universidade de São Paulo. Disponível em: https://arxiv.org/ftp/arxiv/papers/2007/2007.14140.pdf. Acesso em: 23 abr. 2024. , 2020APA
Godoy, M. P. F. de, Gratens, X., Chitta, V., Mesquita, A., Lima Jr., M. M. de, Cantarero, A., et al. (2020). Defect induced room temperature ferromagnetism in high quality Co-doped ZnO bulk samples. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de https://arxiv.org/ftp/arxiv/papers/2007/2007.14140.pdfNLM
Godoy MPF de, Gratens X, Chitta V, Mesquita A, Lima Jr. MM de, Cantarero A, Rahman G, Morbec JM, Carvalho HB de. Defect induced room temperature ferromagnetism in high quality Co-doped ZnO bulk samples [Internet]. 2020 ;[citado 2024 abr. 23 ] Available from: https://arxiv.org/ftp/arxiv/papers/2007/2007.14140.pdfVancouver
Godoy MPF de, Gratens X, Chitta V, Mesquita A, Lima Jr. MM de, Cantarero A, Rahman G, Morbec JM, Carvalho HB de. Defect induced room temperature ferromagnetism in high quality Co-doped ZnO bulk samples [Internet]. 2020 ;[citado 2024 abr. 23 ] Available from: https://arxiv.org/ftp/arxiv/papers/2007/2007.14140.pdf