A simple method for minimizing the transient effect in SOI nMOSFETs at low temperature (1999)
Source: Electrochemical and Solid-State Letters. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS MOS
ABNT
SONNENBERG, Victor e MARTINO, João Antonio. A simple method for minimizing the transient effect in SOI nMOSFETs at low temperature. Electrochemical and Solid-State Letters, v. 2, n. 11, p. 585-586, 1999Tradução . . Acesso em: 24 abr. 2024.APA
Sonnenberg, V., & Martino, J. A. (1999). A simple method for minimizing the transient effect in SOI nMOSFETs at low temperature. Electrochemical and Solid-State Letters, 2( 11), 585-586.NLM
Sonnenberg V, Martino JA. A simple method for minimizing the transient effect in SOI nMOSFETs at low temperature. Electrochemical and Solid-State Letters. 1999 ;2( 11): 585-586.[citado 2024 abr. 24 ]Vancouver
Sonnenberg V, Martino JA. A simple method for minimizing the transient effect in SOI nMOSFETs at low temperature. Electrochemical and Solid-State Letters. 1999 ;2( 11): 585-586.[citado 2024 abr. 24 ]