Source: Proceedings. Conference titles: Conference of the Brazilian Microelectronics Society. Unidade: EP
Subjects: CIRCUITOS INTEGRADOS, SEMICONDUTORES
ABNT
SANTOS FILHO, Sebastião Gomes dos e HASENACK, Claus Martin. Mechanisms of metal and sulfur contamination on silicon wafer surfaces during HF-last cleanings. (em CD-Rom). 1997, Anais.. Itajubá: SBMICRO/EFEI, 1997. . Acesso em: 29 mar. 2024.APA
Santos Filho, S. G. dos, & Hasenack, C. M. (1997). Mechanisms of metal and sulfur contamination on silicon wafer surfaces during HF-last cleanings. (em CD-Rom). In Proceedings. Itajubá: SBMICRO/EFEI.NLM
Santos Filho SG dos, Hasenack CM. Mechanisms of metal and sulfur contamination on silicon wafer surfaces during HF-last cleanings. (em CD-Rom). Proceedings. 1997 ;[citado 2024 mar. 29 ]Vancouver
Santos Filho SG dos, Hasenack CM. Mechanisms of metal and sulfur contamination on silicon wafer surfaces during HF-last cleanings. (em CD-Rom). Proceedings. 1997 ;[citado 2024 mar. 29 ]