Source: The Journal of Physical Chemistry Part C. Unidade: IQSC
Subjects: QUÍMICA TEÓRICA, QUÍMICA
ABNT
TORRES, Israel S. e SILVA, Juarez Lopes Ferreira da e LIMA, Matheus P. The Role of M3+ Substitutional Doping (M = In, Sb, Bi) in the Passivation of the α-CsPbI3(100) Surface. The Journal of Physical Chemistry Part C, p. 1713−1721, 2023Tradução . . Disponível em: https://doi.org/10.1021/acs.jpcc.2c07332. Acesso em: 23 abr. 2024.APA
Torres, I. S., Silva, J. L. F. da, & Lima, M. P. (2023). The Role of M3+ Substitutional Doping (M = In, Sb, Bi) in the Passivation of the α-CsPbI3(100) Surface. The Journal of Physical Chemistry Part C, 1713−1721. doi:10.1021/acs.jpcc.2c07332NLM
Torres IS, Silva JLF da, Lima MP. The Role of M3+ Substitutional Doping (M = In, Sb, Bi) in the Passivation of the α-CsPbI3(100) Surface [Internet]. The Journal of Physical Chemistry Part C. 2023 ;1713−1721.[citado 2024 abr. 23 ] Available from: https://doi.org/10.1021/acs.jpcc.2c07332Vancouver
Torres IS, Silva JLF da, Lima MP. The Role of M3+ Substitutional Doping (M = In, Sb, Bi) in the Passivation of the α-CsPbI3(100) Surface [Internet]. The Journal of Physical Chemistry Part C. 2023 ;1713−1721.[citado 2024 abr. 23 ] Available from: https://doi.org/10.1021/acs.jpcc.2c07332