Electronic states of n-type 'DELTA'-doping in 'GA''AS' heterostructures (1994)
Source: Materials Science Forum. Unidade: IF
Assunto: MATÉRIA CONDENSADA
ABNT
SCOLFARO, L M R et al. Electronic states of n-type 'DELTA'-doping in 'GA''AS' heterostructures. Materials Science Forum, v. 143-7, p. 669-74, 1994Tradução . . Acesso em: 29 mar. 2024.APA
Scolfaro, L. M. R., Leite, J. R., Mendonca, C. A. C., Beliaev, D., Shibli, S. M., Silva, E. C. F., & Meneses, E. A. (1994). Electronic states of n-type 'DELTA'-doping in 'GA''AS' heterostructures. Materials Science Forum, 143-7, 669-74.NLM
Scolfaro LMR, Leite JR, Mendonca CAC, Beliaev D, Shibli SM, Silva ECF, Meneses EA. Electronic states of n-type 'DELTA'-doping in 'GA''AS' heterostructures. Materials Science Forum. 1994 ;143-7 669-74.[citado 2024 mar. 29 ]Vancouver
Scolfaro LMR, Leite JR, Mendonca CAC, Beliaev D, Shibli SM, Silva ECF, Meneses EA. Electronic states of n-type 'DELTA'-doping in 'GA''AS' heterostructures. Materials Science Forum. 1994 ;143-7 669-74.[citado 2024 mar. 29 ]