Movpe growth of 'AL IND.1-X''AS' above 850'GRAUS'c (1990)
- Authors:
- Autor USP: BASMAJI, PIERRE - IFSC
- Unidade: IFSC
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Publisher: World Scientific
- Publisher place: Singapore
- Date published: 1990
- Source:
- Título do periódico: Proceedings
- Conference titles: Brazilian School of Semiconductor Physics
-
ABNT
BASMAJI, Pierre e GIBART, P. Movpe growth of 'AL IND.1-X''AS' above 850'GRAUS'c. 1990, Anais.. Singapore: World Scientific, 1990. . Acesso em: 11 maio 2024. -
APA
Basmaji, P., & Gibart, P. (1990). Movpe growth of 'AL IND.1-X''AS' above 850'GRAUS'c. In Proceedings. Singapore: World Scientific. -
NLM
Basmaji P, Gibart P. Movpe growth of 'AL IND.1-X''AS' above 850'GRAUS'c. Proceedings. 1990 ;[citado 2024 maio 11 ] -
Vancouver
Basmaji P, Gibart P. Movpe growth of 'AL IND.1-X''AS' above 850'GRAUS'c. Proceedings. 1990 ;[citado 2024 maio 11 ] - Raman scattering of the optical '('GA''AS') IND. n'/ '('AL''AS') IND. n' superlattices grown on (311)A and (311)B surface
- Spectroscopy of optical phonons in InAs/GaAs self-assembled quantum dots
- Propriedades óticas, estruturais e elétricas de camadas múltiplas de pontos quânticos naturais de InAs crescidos sobre substrato de GaAs
- Kinetic limit of segregation during the molecular beam epitaxy of GaAs/AlAs heterostructures
- Raman study of interface arrangement in 'GA''AS' / 'AL''AS' superlattices grown in different crystal directions
- Propriedades opticas e eletricas de silicio poroso
- Optical and structural properties of low temperature 'GA''AS' layers grown by molecular beam epitaxy
- Propriedades opticas de filmes 'GA''AS' crescidos a baixa temperatura por mbe
- Transition of aharonov-bohm oscillations from hc / e to hc/2e periodicity induced by magnetic field in the array of rings with small diameter
- Nano-scale wires of 'GA''AS ON POROUS 'si' grown by molecular beam epitaxy
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