Optical anisotropy in (311) 'IN IND.1-X''GA IND.X''AS' / 'GA''AS' quantum wells (1997)
- Autores:
- Autores USP: BASMAJI, PIERRE - IFSC ; GUIMARAES, FRANCISCO EDUARDO GONTIJO - IFSC
- Unidade: IFSC
- Assunto: MATÉRIA CONDENSADA
- Idioma: Inglês
- Imprenta:
- Local: Águas de Lindóia
- Data de publicação: 1997
- Fonte:
- Título do periódico: Program and Abstracts
- Nome do evento: Brazilian Workshop on Semiconductor Physics
-
ABNT
RIBEIRO, A. A et al. Optical anisotropy in (311) 'IN IND.1-X''GA IND.X''AS' / 'GA''AS' quantum wells. 1997, Anais.. Águas de Lindóia: Instituto de Física de São Carlos, Universidade de São Paulo, 1997. . Acesso em: 19 abr. 2024. -
APA
Ribeiro, A. A., Narvaez, G. A., Torriani, I. C. L., Cerdeira, F., Guimarães, F. E. G., Lubishev, D., & Basmaji, P. (1997). Optical anisotropy in (311) 'IN IND.1-X''GA IND.X''AS' / 'GA''AS' quantum wells. In Program and Abstracts. Águas de Lindóia: Instituto de Física de São Carlos, Universidade de São Paulo. -
NLM
Ribeiro AA, Narvaez GA, Torriani ICL, Cerdeira F, Guimarães FEG, Lubishev D, Basmaji P. Optical anisotropy in (311) 'IN IND.1-X''GA IND.X''AS' / 'GA''AS' quantum wells. Program and Abstracts. 1997 ;[citado 2024 abr. 19 ] -
Vancouver
Ribeiro AA, Narvaez GA, Torriani ICL, Cerdeira F, Guimarães FEG, Lubishev D, Basmaji P. Optical anisotropy in (311) 'IN IND.1-X''GA IND.X''AS' / 'GA''AS' quantum wells. Program and Abstracts. 1997 ;[citado 2024 abr. 19 ] - Temperature effects on the optical properties of InGaAs/GaAs single quantum wells grown on high index GaAs substrates with non-abrupt interfaces
- Optical anisotropy in (311) 'IN''GA''AS' / 'GA''AS' quantum wells
- Influence of surface structure on segregation and alloy properties in (100)- and (311)-oriented 'IN''GA''AS' / 'GA''AS' heterostructures
- Influence of surface structure on surface segregation and alloy properties in (100)- and (311)- oriented 'IN''GA''AS' / 'GA''AS' heterostructures
- Luminescence centers in porous silicon
- Influence of surface structure on segregation and alloy properties in (100)- and (311)-oriented 'IN''GA''AS' / 'GA''AS' heterostructures
- Influence of surface structure on segregation and alloy properties in (100)- and (311)- oriented 'IN''GA''AS' / 'GA''AS' heterostructures
- Influence of surface structure on segregation and alloy quality in (100) and (311) oriented InGaAs/GaAs heterostructures
- Propriedades oticas de heteroestruturas semicondutoras de 'IN''GA''AS' / 'GA''AS' crescidas nas direcoes [100] e [311]
- Influence of surface structure on segregation and alloy properties in (100)- and (311)-oriented 'IN''GA''AS' / 'GA''AS' heterostructures
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