Analytical model for the photodetection mechanisms in high-electron mobility transistors (1996)
- Authors:
- Autor USP: ROMERO, MURILO ARAUJO - EESC
- Unidade: EESC
- DOI: 10.1109/22.556467
- Assunto: ENGENHARIA ELÉTRICA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Ieee Transactions on Microwave Theory and Techniques
- Volume/Número/Paginação/Ano: v.44, n.12, p.2279-87, dec. 1996
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
ROMERO, Murilo Araujo e MARTINEZ, M A G e HERCZFELD, P R. Analytical model for the photodetection mechanisms in high-electron mobility transistors. Ieee Transactions on Microwave Theory and Techniques, v. 44, n. 12, p. 2279-87, 1996Tradução . . Disponível em: https://doi.org/10.1109/22.556467. Acesso em: 06 maio 2024. -
APA
Romero, M. A., Martinez, M. A. G., & Herczfeld, P. R. (1996). Analytical model for the photodetection mechanisms in high-electron mobility transistors. Ieee Transactions on Microwave Theory and Techniques, 44( 12), 2279-87. doi:10.1109/22.556467 -
NLM
Romero MA, Martinez MAG, Herczfeld PR. Analytical model for the photodetection mechanisms in high-electron mobility transistors [Internet]. Ieee Transactions on Microwave Theory and Techniques. 1996 ;44( 12): 2279-87.[citado 2024 maio 06 ] Available from: https://doi.org/10.1109/22.556467 -
Vancouver
Romero MA, Martinez MAG, Herczfeld PR. Analytical model for the photodetection mechanisms in high-electron mobility transistors [Internet]. Ieee Transactions on Microwave Theory and Techniques. 1996 ;44( 12): 2279-87.[citado 2024 maio 06 ] Available from: https://doi.org/10.1109/22.556467 - Analysis of a proposed dropping filter for WDM systems
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Informações sobre o DOI: 10.1109/22.556467 (Fonte: oaDOI API)
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