Characterization of periodically 'delta'-doped semiconductors by capacitance-voltage profiling (1997)
- Authors:
- Autor USP: HENRIQUES, ANDRE BOHOMOLETZ - IF
- Unidade: IF
- DOI: 10.1088/0268-1242/12/11/022
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Semiconductor Science and Technology
- Volume/Número/Paginação/Ano: v. 12, p. 1455-1458, 1997
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
GONÇALVES, L. C. D. et al. Characterization of periodically 'delta'-doped semiconductors by capacitance-voltage profiling. Semiconductor Science and Technology, v. 12, p. 1455-1458, 1997Tradução . . Disponível em: https://doi.org/10.1088/0268-1242/12/11/022. Acesso em: 19 abr. 2024. -
APA
Gonçalves, L. C. D., Henriques, A. B., Souza, P. L., & Yavich, B. (1997). Characterization of periodically 'delta'-doped semiconductors by capacitance-voltage profiling. Semiconductor Science and Technology, 12, 1455-1458. doi:10.1088/0268-1242/12/11/022 -
NLM
Gonçalves LCD, Henriques AB, Souza PL, Yavich B. Characterization of periodically 'delta'-doped semiconductors by capacitance-voltage profiling [Internet]. Semiconductor Science and Technology. 1997 ; 12 1455-1458.[citado 2024 abr. 19 ] Available from: https://doi.org/10.1088/0268-1242/12/11/022 -
Vancouver
Gonçalves LCD, Henriques AB, Souza PL, Yavich B. Characterization of periodically 'delta'-doped semiconductors by capacitance-voltage profiling [Internet]. Semiconductor Science and Technology. 1997 ; 12 1455-1458.[citado 2024 abr. 19 ] Available from: https://doi.org/10.1088/0268-1242/12/11/022 - Theoretical investigation of the photoluminescence and fermi surface of periodically delta-dopped 'GA''AS'
- Magneto-optical studies of screened excitons in 'GA''AS' / 'AL IND.X' 'GA IND.1-X''AS' modulation doped quantum wells
- Analise espectral de processos magneto-oscilatorios
- Quantum and transport mobilities in 'DELTA'-doped semiconductors
- Magnetic quantum effects in degenerate superlattices
- High magnetic field transport and photoluminescence in doped InGaAs/InP superlattices
- Optical investigation of magnetic phases in epitaxial 'EU''SE'
- Pseudomorphic InxGal -xAs/InO.52Al0.48As modulation doped heterostructures grown by LP-MOVPE
- Carbon delta-doped AlGaAs grown by metalorganic vapor phase epitaxy
- InP/InGaAs doped quantum barrier systems
Informações sobre o DOI: 10.1088/0268-1242/12/11/022 (Fonte: oaDOI API)
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
