p-type Si-doped structures grown by molecular beam epitaxy on (311)A GaAs substrates (1998)
- Autores:
- Autores USP: QUIVY, ALAIN ANDRE - IF ; SILVA, EUZI CONCEICAO FERNANDES DA - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Assunto: FÍSICA
- Idioma: Inglês
- Imprenta:
- Editora: Sociedade Brasileira de Física
- Local: São Paulo
- Data de publicação: 1998
- Fonte:
- Título do periódico: Brazilian Journal of Physics
- Volume/Número/Paginação/Ano: v. 27A, n. 4, p. 125-129, 1998
- Nome do evento: Brazilian Workshop on Semiconductor Physics
-
ABNT
QUIVY, A. A. et al. p-type Si-doped structures grown by molecular beam epitaxy on (311)A GaAs substrates. Brazilian Journal of Physics. São Paulo: Sociedade Brasileira de Física. . Acesso em: 28 mar. 2024. , 1998 -
APA
Quivy, A. A., Frizzarini, M., Silva, E. C. F., Sperandio, A. L., & Leite, J. R. (1998). p-type Si-doped structures grown by molecular beam epitaxy on (311)A GaAs substrates. Brazilian Journal of Physics. São Paulo: Sociedade Brasileira de Física. -
NLM
Quivy AA, Frizzarini M, Silva ECF, Sperandio AL, Leite JR. p-type Si-doped structures grown by molecular beam epitaxy on (311)A GaAs substrates. Brazilian Journal of Physics. 1998 ; 27A( 4): 125-129.[citado 2024 mar. 28 ] -
Vancouver
Quivy AA, Frizzarini M, Silva ECF, Sperandio AL, Leite JR. p-type Si-doped structures grown by molecular beam epitaxy on (311)A GaAs substrates. Brazilian Journal of Physics. 1998 ; 27A( 4): 125-129.[citado 2024 mar. 28 ] - Concentration dependence of Si-doped GaAs layers grown by moleucular beam epitaxy on (311) A substrates
- InAs/GaAs quantum dots optically active at 1.5 'mu'
- 'p-type''Si-Doped' Structures Grown By Molecular Beam Epitaxy on '(311)'A 'GaAs' Substrates
- H-band emission in single heterojunctions
- Illumination as a tool to investigate the quantum mobility of the two-dimensional electron gas in a Si 'delta'-doped GaAs/'In IND.0.15' 'Ga IND.0.85'As/GaAs quantum well
- Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface
- Optical response at 1.3 'mu'm and 1.5 'mu'm with InAs quantum dots embedded in a pure GaAs matrix
- Effects of thermally activated hole escape mechanism on the optical and electrical properties in 'ro'-type Si 'delta'-doped GaAs(311)A layers
- Study of the 2-dimensional to 3-dimensional transition in p-type multiple-delta-doped GaAs layers grown on top of (311)A GaAs substrates
- Large InAs/GaAs quantum dots optically active in the long-wavelength region
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