Quasi-Fermi levels, chemical and electric potential profiles of a semiconductor under illumination (1999)
- Authors:
- USP affiliated authors: SCOLFARO, LUISA MARIA RIBEIRO - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- DOI: 10.1590/s0103-97331999000400034
- Assunto: FÍSICA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Brazilian Journal of Physics
- ISSN: 0103-9733
- Volume/Número/Paginação/Ano: v. 29, n. 4, p. 775-778, 1999
- Conference titles: Brazilian Workshop on Semiconductor Physics
- Este periódico é de acesso aberto
- Este artigo é de acesso aberto
- URL de acesso aberto
- Cor do Acesso Aberto: gold
- Licença: cc-by-nc
-
ABNT
SANTOS, A. M. dos et al. Quasi-Fermi levels, chemical and electric potential profiles of a semiconductor under illumination. Brazilian Journal of Physics, v. 29, n. 4, p. 775-778, 1999Tradução . . Disponível em: https://doi.org/10.1590/s0103-97331999000400034. Acesso em: 19 abr. 2024. -
APA
Santos, A. M. dos, Beliaev, D., Scolfaro, L. M. R., & Leite, J. R. (1999). Quasi-Fermi levels, chemical and electric potential profiles of a semiconductor under illumination. Brazilian Journal of Physics, 29( 4), 775-778. doi:10.1590/s0103-97331999000400034 -
NLM
Santos AM dos, Beliaev D, Scolfaro LMR, Leite JR. Quasi-Fermi levels, chemical and electric potential profiles of a semiconductor under illumination [Internet]. Brazilian Journal of Physics. 1999 ; 29( 4): 775-778.[citado 2024 abr. 19 ] Available from: https://doi.org/10.1590/s0103-97331999000400034 -
Vancouver
Santos AM dos, Beliaev D, Scolfaro LMR, Leite JR. Quasi-Fermi levels, chemical and electric potential profiles of a semiconductor under illumination [Internet]. Brazilian Journal of Physics. 1999 ; 29( 4): 775-778.[citado 2024 abr. 19 ] Available from: https://doi.org/10.1590/s0103-97331999000400034 - Estrutura eletronica de pocos quanticos 'AL IND.X' 'GA IND.1-X''AS' / 'GA''AS' delta-dopados ('GAMA'-'SI') sob efeito de campos magneticos
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- Band structure of holes in p-'DELTA'-doping superlattices
- Energy levels due to n-type'GAMA'-doping in silicon
- Comparative studies of photoluminescence from n- and p-'GAMA'-doping wells in 'GA''AS'
- Structural properties of cubic gan epitaxial layers grown on 'BETA-SIC'
- Exchange-correlation effects on a multicomponent isotropic hole gas in semiconductors
- Parameters of the Kane model from effective masses: ambiguities and instabilities
- Electronic properties of nitride-alloys through first principles calculations
- Influence of composition fluctuations and strain on gap bowing in 'In IND.X''Ga IND.1-X'N
Informações sobre o DOI: 10.1590/s0103-97331999000400034 (Fonte: oaDOI API)
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