Study of heterojunction diodes using POMA/PANI and amorphous silicon structures (2000)
- Authors:
- USP affiliated authors: DIRANI, ELY ANTONIO TADEU - EP ; ONMORI, ROBERTO KOJI - EP ; FARIA, ROBERTO MENDONCA - IFSC
- Unidades: EP; IFSC
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Book of abstracts
- Conference titles: International Conference on Science and Technology of Synthetic Metals
-
ABNT
DIRANI, Ely Antonio Tadeu et al. Study of heterojunction diodes using POMA/PANI and amorphous silicon structures. 2000, Anais.. Amsterdam: Elsevier, 2000. . Acesso em: 19 abr. 2024. -
APA
Dirani, E. A. T., Onmori, R. K., Olivati, C. de A., & Faria, R. M. (2000). Study of heterojunction diodes using POMA/PANI and amorphous silicon structures. In Book of abstracts. Amsterdam: Elsevier. -
NLM
Dirani EAT, Onmori RK, Olivati C de A, Faria RM. Study of heterojunction diodes using POMA/PANI and amorphous silicon structures. Book of abstracts. 2000 ;[citado 2024 abr. 19 ] -
Vancouver
Dirani EAT, Onmori RK, Olivati C de A, Faria RM. Study of heterojunction diodes using POMA/PANI and amorphous silicon structures. Book of abstracts. 2000 ;[citado 2024 abr. 19 ] - Efeito fotovoltaico e fotocondutividade em dispositivos poliméricos
- Photoconduction in Schottky diodes with ´MI´c-Si:H(n)/poly(o-methoxyaniline)/a-Si:H(p) structure
- Study of photovoltaic effect on a-Si:H/POMA/'MÜ'c-Si:H structures
- Study of heterojunction diodes using POMA/PANI and amorphous/microcrystalline silicon structures
- Photovoltaic effect on 'MU'c- SiH(n+)/poly (o-methoxyaniline)/a-SiH(p) structures
- Devide model for POMA field-effect transistor
- Device model for polyaniline field-effect transistor
- Processo de fabricação de um mosfet de poli (o-metoxianilina)
- Obtenção e caracterização de diodo usando a poli (o-metoxianilina)
- Device model for polyaniline field-effect transistor
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