Two-dimensional intensity profiles of effective satellites (2002)
- Autores:
- Autores USP: MORELHAO, SERGIO LUIZ - IF ; QUIVY, ALAIN ANDRE - IF
- Unidade: IF
- DOI: 10.1107/s0021889801018921
- Assuntos: DIFRAÇÃO POR RAIOS X; CRISTALOGRAFIA FÍSICA
- Idioma: Inglês
- Imprenta:
- Local: Copenhagen
- Data de publicação: 2002
- Fonte:
- Título do periódico: Journal of Applied Crystallography
- ISSN: 0021-8898
- Volume/Número/Paginação/Ano: v. 35, pt.1, p. 69-74, 2002
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
MORELHÃO, Sérgio Luiz et al. Two-dimensional intensity profiles of effective satellites. Journal of Applied Crystallography, v. 35, p. 69-74, 2002Tradução . . Disponível em: https://doi.org/10.1107/s0021889801018921. Acesso em: 19 abr. 2024. -
APA
Morelhão, S. L., Avanci, L. H., Quivy, A. A., & Abramog, E. (2002). Two-dimensional intensity profiles of effective satellites. Journal of Applied Crystallography, 35, 69-74. doi:10.1107/s0021889801018921 -
NLM
Morelhão SL, Avanci LH, Quivy AA, Abramog E. Two-dimensional intensity profiles of effective satellites [Internet]. Journal of Applied Crystallography. 2002 ; 35 69-74.[citado 2024 abr. 19 ] Available from: https://doi.org/10.1107/s0021889801018921 -
Vancouver
Morelhão SL, Avanci LH, Quivy AA, Abramog E. Two-dimensional intensity profiles of effective satellites [Internet]. Journal of Applied Crystallography. 2002 ; 35 69-74.[citado 2024 abr. 19 ] Available from: https://doi.org/10.1107/s0021889801018921 - Combining synchrotron X-ray techniques for studying nanostructured semiconductor devices
- Strain field of InAs QDs on GaAs (001) substrates by synchrotron X-ray renninger scanning
- Synchrotron X-ray techniques for studying nanostructured semiconductor devices
- Strong CTR-cap-layer coupling for X-ray scattering in InAs/GaAs (001) quantum dots systems
- Influence of quantum-dots density on average in-plane strain of optoelectronic devices investigated by high-resolution X-ray diffraction
- Synchrotron x-ray renninger scanning for studying strain in InAs/GaAs quantum dot system
- Strain field of InAs QDs on GaAs(001) substrate surface: characterization by synchrotron X-ray renninger scanning
- Strain field of InAs QDs on GaAs(001) substrate surface: characterization by synchrotron X-ray renninger scanning
- On the high accuracy lattice parameters determination by n-beam diffraction: Theory and application to the InAs quantum dots grown over GaAs(001) substrate system
- High-resolution synchrotron radiation Renninger scan to examine hybrid reflections in InGaP/GaAs(001)
Informações sobre o DOI: 10.1107/s0021889801018921 (Fonte: oaDOI API)
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