Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy (2002)
- Autores:
- Autores USP: QUIVY, ALAIN ANDRE - IF ; SILVA, EUZI CONCEICAO FERNANDES DA - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- DOI: 10.1063/1.1513182
- Assuntos: SEMICONDUTORES; SUPERFÍCIE FÍSICA
- Idioma: Inglês
- Imprenta:
- Fonte:
- Título do periódico: Applied Physics Letters
- ISSN: 0003-6951
- Volume/Número/Paginação/Ano: v. 81, n. 15, p. 2863-2865, 2002
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
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ABNT
MARTINI, S et al. Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy. Applied Physics Letters, v. 81, n. 15, p. 2863-2865, 2002Tradução . . Disponível em: https://doi.org/10.1063/1.1513182. Acesso em: 24 abr. 2024. -
APA
Martini, S., Quivy, A. A., Silva, E. C. F. da, & Leite, J. R. (2002). Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy. Applied Physics Letters, 81( 15), 2863-2865. doi:10.1063/1.1513182 -
NLM
Martini S, Quivy AA, Silva ECF da, Leite JR. Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy [Internet]. Applied Physics Letters. 2002 ; 81( 15): 2863-2865.[citado 2024 abr. 24 ] Available from: https://doi.org/10.1063/1.1513182 -
Vancouver
Martini S, Quivy AA, Silva ECF da, Leite JR. Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy [Internet]. Applied Physics Letters. 2002 ; 81( 15): 2863-2865.[citado 2024 abr. 24 ] Available from: https://doi.org/10.1063/1.1513182 - Optical response at 1.3 'mu'm and 1.5 'mu'm with InAs quantum dots embedded in a pure GaAs matrix
- Illumination as a tool to investigate the quantum mobility of the two-dimensional electron gas in a Si 'delta'-doped GaAs/'In IND.0.15' 'Ga IND.0.85'As/GaAs quantum well
- Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface
- Effects of thermally activated hole escape mechanism on the optical and electrical properties in 'ro'-type Si 'delta'-doped GaAs(311)A layers
- Concentration dependence of Si-doped GaAs layers grown by moleucular beam epitaxy on (311) A substrates
- InAs/GaAs quantum dots optically active at 1.5 'mu'
- H-band emission in single heterojunctions
- 'p-type''Si-Doped' Structures Grown By Molecular Beam Epitaxy on '(311)'A 'GaAs' Substrates
- Study of the 2-dimensional to 3-dimensional transition in p-type multiple-delta-doped GaAs layers grown on top of (311)A GaAs substrates
- Large InAs/GaAs quantum dots optically active in the long-wavelength region
Informações sobre o DOI: 10.1063/1.1513182 (Fonte: oaDOI API)
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