Effects of oxygen partial pressure and annealing temeprature on the formation of sputtered tungsten oxide films (2002)
- Autores:
- Autor USP: SILVA, MARCELO DE ASSUMPCAO PEREIRA DA - IFSC
- Unidade: IFSC
- Assunto: FILMES FINOS
- Idioma: Inglês
- Imprenta:
- Local: Pennington
- Data de publicação: 2002
- Fonte:
- Título do periódico: Journal of the Electrochemical Society
- ISSN: 0013-4651
- Volume/Número/Paginação/Ano: v. 149, n. 3, p. H81-H86, Mar. 2002
-
ABNT
BITTENCOURT, C et al. Effects of oxygen partial pressure and annealing temeprature on the formation of sputtered tungsten oxide films. Journal of the Electrochemical Society, v. 149, n. 3, p. H81-H86, 2002Tradução . . Acesso em: 18 abr. 2024. -
APA
Bittencourt, C., Landers, R., Llobet, E., Molas, G., Correig, X., Silva, M. de A. P. da, et al. (2002). Effects of oxygen partial pressure and annealing temeprature on the formation of sputtered tungsten oxide films. Journal of the Electrochemical Society, 149( 3), H81-H86. -
NLM
Bittencourt C, Landers R, Llobet E, Molas G, Correig X, Silva M de AP da, Sueiras JE, Calderer J. Effects of oxygen partial pressure and annealing temeprature on the formation of sputtered tungsten oxide films. Journal of the Electrochemical Society. 2002 ; 149( 3): H81-H86.[citado 2024 abr. 18 ] -
Vancouver
Bittencourt C, Landers R, Llobet E, Molas G, Correig X, Silva M de AP da, Sueiras JE, Calderer J. Effects of oxygen partial pressure and annealing temeprature on the formation of sputtered tungsten oxide films. Journal of the Electrochemical Society. 2002 ; 149( 3): H81-H86.[citado 2024 abr. 18 ] - Microscopia de força atômica aplicada a polímeros. (Em CD-ROM)
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