Theoretical investigation of extended defects and their interactions with vacancies in 'Si IND.X' 'Ge IND.1-X' (2003)
- Autores:
- Autor USP: FAZZIO, ADALBERTO - IF
- Unidade: IF
- Assunto: ESTRUTURA ELETRÔNICA
- Idioma: Inglês
- Imprenta:
- Fonte:
- Título do periódico: Physical Review B
- ISSN: 0163-1829
- Volume/Número/Paginação/Ano: v. 67, n. 20, p. 205317/1-205317, 2003
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ABNT
MIWA, R H e VENEZUELA, P e FAZZIO, Adalberto. Theoretical investigation of extended defects and their interactions with vacancies in 'Si IND.X' 'Ge IND.1-X'. Physical Review B, v. 67, n. 20, p. 205317/1-205317, 2003Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000067000020205317000001&idtype=cvips. Acesso em: 23 abr. 2024. -
APA
Miwa, R. H., Venezuela, P., & Fazzio, A. (2003). Theoretical investigation of extended defects and their interactions with vacancies in 'Si IND.X' 'Ge IND.1-X'. Physical Review B, 67( 20), 205317/1-205317. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000067000020205317000001&idtype=cvips -
NLM
Miwa RH, Venezuela P, Fazzio A. Theoretical investigation of extended defects and their interactions with vacancies in 'Si IND.X' 'Ge IND.1-X' [Internet]. Physical Review B. 2003 ; 67( 20): 205317/1-205317.[citado 2024 abr. 23 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000067000020205317000001&idtype=cvips -
Vancouver
Miwa RH, Venezuela P, Fazzio A. Theoretical investigation of extended defects and their interactions with vacancies in 'Si IND.X' 'Ge IND.1-X' [Internet]. Physical Review B. 2003 ; 67( 20): 205317/1-205317.[citado 2024 abr. 23 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000067000020205317000001&idtype=cvips - Spectral distribution of photoionization cross section of 'FE POT.2+' in inp: 'FE'
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