Adsorption of Si and Ge in monoatomic Si(100) steps (2003)
- Authors:
- USP affiliated authors: SILVA, ANTONIO JOSE ROQUE DA - IF ; FAZZIO, ADALBERTO - IF
- Unidade: IF
- Subjects: SEMICONDUTORES; MICROSCOPIA ELETRÔNICA DE VARREDURA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Book of Abstracts
- Volume/Número/Paginação/Ano: Fortaleza : DF/UFC, 2003
- Conference titles: Brazilian Workshop on Semiconductor Physics
-
ABNT
DALPIAN, G. M. e SILVA, Antonio Jose Roque da e FAZZIO, Adalberto. Adsorption of Si and Ge in monoatomic Si(100) steps. 2003, Anais.. Fortaleza: DF/UFC, 2003. . Acesso em: 23 abr. 2024. -
APA
Dalpian, G. M., Silva, A. J. R. da, & Fazzio, A. (2003). Adsorption of Si and Ge in monoatomic Si(100) steps. In Book of Abstracts. Fortaleza: DF/UFC. -
NLM
Dalpian GM, Silva AJR da, Fazzio A. Adsorption of Si and Ge in monoatomic Si(100) steps. Book of Abstracts. 2003 ;[citado 2024 abr. 23 ] -
Vancouver
Dalpian GM, Silva AJR da, Fazzio A. Adsorption of Si and Ge in monoatomic Si(100) steps. Book of Abstracts. 2003 ;[citado 2024 abr. 23 ] - Vacancy-mediated diffusion in disordered alloys: Ge self-diffusion in 'Si IND.1-X' 'Ge IND.X'
- Influence of surface degrees of freedom on the adsorption of Ge ad-atoms on Si(100)
- Eletronic and structural properties of 'C IND. 59'Si on a hydrogenated Si(100) surface
- A possible route to grow a (Mn:'Si IND. (1-x)'Ge IND. x')-based diluted magnetic semiconductor
- Adsoption of gold on carbon nanotubes
- Computer simulations of gold nanowires
- Ab initio study of an iron atom interacting with single-wall carbon nanotubes
- Electronic and magnetic properties of iron chains on carbon nanotubes
- Adsorption and incorporation of Mn on Si(100)
- Effect of impurities in the breaking of gold nanowires
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