AB initio calculation of the (100) and surface phonon dispersion of GaAs and GaN (2003)
- Autores:
- Autores USP: SCOLFARO, LUISA MARIA RIBEIRO - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Assunto: SEMICONDUTORES
- Idioma: Inglês
- Imprenta:
- Fonte:
- Título do periódico: Resumos
- Nome do evento: Encontro Nacional de Física da Matéria Condensada 26
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ABNT
ALVES, H W Leite et al. AB initio calculation of the (100) and surface phonon dispersion of GaAs and GaN. 2003, Anais.. São Paulo: SBF, 2003. . Acesso em: 23 abr. 2024. -
APA
Alves, H. W. L., Alves, J. L. A., Scolfaro, L. M. R., & Leite, J. R. (2003). AB initio calculation of the (100) and surface phonon dispersion of GaAs and GaN. In Resumos. São Paulo: SBF. -
NLM
Alves HWL, Alves JLA, Scolfaro LMR, Leite JR. AB initio calculation of the (100) and surface phonon dispersion of GaAs and GaN. Resumos. 2003 ;[citado 2024 abr. 23 ] -
Vancouver
Alves HWL, Alves JLA, Scolfaro LMR, Leite JR. AB initio calculation of the (100) and surface phonon dispersion of GaAs and GaN. Resumos. 2003 ;[citado 2024 abr. 23 ] - Estrutura eletronica de pocos quanticos 'AL IND.X' 'GA IND.1-X''AS' / 'GA''AS' delta-dopados ('GAMA'-'SI') sob efeito de campos magneticos
- Electronic structure of n-type 'DELTA'-doping multiple layers and superlattices in silicon
- Band structure of holes in p-'DELTA'-doping superlattices
- Energy levels due to n-type'GAMA'-doping in silicon
- Comparative studies of photoluminescence from n- and p-'GAMA'-doping wells in 'GA''AS'
- Structural properties of cubic gan epitaxial layers grown on 'BETA-SIC'
- Exchange-correlation effects on a multicomponent isotropic hole gas in semiconductors
- Parameters of the Kane model from effective masses: ambiguities and instabilities
- Electronic properties of nitride-alloys through first principles calculations
- Influence of composition fluctuations and strain on gap bowing in 'In IND.X''Ga IND.1-X'N
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