Energy transfer in small lens-shaped in as quantum dots observed by microluminescence image (2003)
- Autores:
- Sales, F V de - Universidade de Brasília (UnB)
- Silva, S W da - Universidade de Brasília (UnB)
- Cruz, J M R - Universidade de Brasília (UnB)
- Monte, A F G - Universidade de Brasília (UnB)
- Soler, M A G - Universidade de Brasília (UnB)
- Morais, P C - Universidade de Brasília (UnB)
- Silva, M J da
- Quivy, A. A.
- Leite, J. R.
- Autores USP: QUIVY, ALAIN ANDRE - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Assuntos: FÍSICA; ESTRUTURA ELETRÔNICA; MATÉRIA CONDENSADA
- Idioma: Inglês
- Imprenta:
- Fonte:
- Título do periódico: Book of Abstracts
- Nome do evento: International Meeting on Applied Physics
-
ABNT
SALES, F V de et al. Energy transfer in small lens-shaped in as quantum dots observed by microluminescence image. 2003, Anais.. Badajoz: APHYS, 2003. . Acesso em: 24 abr. 2024. -
APA
Sales, F. V. de, Silva, S. W. da, Cruz, J. M. R., Monte, A. F. G., Soler, M. A. G., Morais, P. C., et al. (2003). Energy transfer in small lens-shaped in as quantum dots observed by microluminescence image. In Book of Abstracts. Badajoz: APHYS. -
NLM
Sales FV de, Silva SW da, Cruz JMR, Monte AFG, Soler MAG, Morais PC, Silva MJ da, Quivy AA, Leite JR. Energy transfer in small lens-shaped in as quantum dots observed by microluminescence image. Book of Abstracts. 2003 ;[citado 2024 abr. 24 ] -
Vancouver
Sales FV de, Silva SW da, Cruz JMR, Monte AFG, Soler MAG, Morais PC, Silva MJ da, Quivy AA, Leite JR. Energy transfer in small lens-shaped in as quantum dots observed by microluminescence image. Book of Abstracts. 2003 ;[citado 2024 abr. 24 ] - Optical characterization of GaAs/AlAs multiple quantum wells interfaces
- Fônons de borda da zona de brillouin induzidos em espalhamento raman por defeito local
- Growth of selg-organized InGaAs islands by molecular beam epitaxy
- Optically determined carrier transport in InGaAs-GaAs quantum wells
- Coupled rate equation modeling of self-assembled quantum dot photoluminescence
- Carrier kinetics in quantum dots through continuos wave photoluminescence modeling: a systematic study on a sample with surface dot density gradient
- Photoexcited carrier diffusion in self-assembled InAs/GaAs quantum dots with different dot densities
- Crescimento e caracterizacao optica de heteroestrutura de 'AL IND.X'ga ind.1-x''as' / 'ga''as' E 'in ind.Y''ga ind.1-y''as' / 'ga''as'
- Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'GAMA'-doped quantum wells
- Optimization of MBE-grown of distributed Bragg reflectors for the fabrication optical devices
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