Ab initio calculation of the (100) and (110) surface phonon dispersion of GaAs and GaN (2004)
- Authors:
- USP affiliated authors: SCOLFARO, LUISA MARIA RIBEIRO - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- DOI: 10.1590/s0103-97332004000400021
- Subjects: FÍSICA; MATÉRIA CONDENSADA; ESTRUTURA ELETRÔNICA; SUPERFÍCIE FÍSICA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Brazilian Journal of Physics
- ISSN: 0103-9733
- Este periódico é de acesso aberto
- Este artigo é de acesso aberto
- URL de acesso aberto
- Cor do Acesso Aberto: gold
- Licença: cc-by-nc
-
ABNT
ALVES, H W Leite et al. Ab initio calculation of the (100) and (110) surface phonon dispersion of GaAs and GaN. Brazilian Journal of Physics, 2004Tradução . . Disponível em: https://doi.org/10.1590/s0103-97332004000400021. Acesso em: 19 abr. 2024. -
APA
Alves, H. W. L., Alves, J. L. A., Santos, A. M., Scolfaro, L. M. R., & Leite, J. R. (2004). Ab initio calculation of the (100) and (110) surface phonon dispersion of GaAs and GaN. Brazilian Journal of Physics. doi:10.1590/s0103-97332004000400021 -
NLM
Alves HWL, Alves JLA, Santos AM, Scolfaro LMR, Leite JR. Ab initio calculation of the (100) and (110) surface phonon dispersion of GaAs and GaN [Internet]. Brazilian Journal of Physics. 2004 ;[citado 2024 abr. 19 ] Available from: https://doi.org/10.1590/s0103-97332004000400021 -
Vancouver
Alves HWL, Alves JLA, Santos AM, Scolfaro LMR, Leite JR. Ab initio calculation of the (100) and (110) surface phonon dispersion of GaAs and GaN [Internet]. Brazilian Journal of Physics. 2004 ;[citado 2024 abr. 19 ] Available from: https://doi.org/10.1590/s0103-97332004000400021 - Estrutura eletronica de pocos quanticos 'AL IND.X' 'GA IND.1-X''AS' / 'GA''AS' delta-dopados ('GAMA'-'SI') sob efeito de campos magneticos
- Electronic structure of n-type 'DELTA'-doping multiple layers and superlattices in silicon
- Band structure of holes in p-'DELTA'-doping superlattices
- Energy levels due to n-type'GAMA'-doping in silicon
- Comparative studies of photoluminescence from n- and p-'GAMA'-doping wells in 'GA''AS'
- Structural properties of cubic gan epitaxial layers grown on 'BETA-SIC'
- Exchange-correlation effects on a multicomponent isotropic hole gas in semiconductors
- Parameters of the Kane model from effective masses: ambiguities and instabilities
- Electronic properties of nitride-alloys through first principles calculations
- Influence of composition fluctuations and strain on gap bowing in 'In IND.X''Ga IND.1-X'N
Informações sobre o DOI: 10.1590/s0103-97332004000400021 (Fonte: oaDOI API)
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