Laser-induced generation of micrometer-sized luminescent patterns on rare-earth-doped amorphous films (2004)
- Autores:
- Autor USP: ZANATTA, ANTONIO RICARDO - IFSC
- Unidade: IFSC
- DOI: 10.1063/1.1794363
- Assuntos: FILMES FINOS; LASER; LUMINESCÊNCIA; TERRAS RARAS
- Idioma: Inglês
- Imprenta:
- Fonte:
- Título do periódico: Journal of Applied Physics
- ISSN: 0021-8979
- Volume/Número/Paginação/Ano: v. 96, n. 11, p. 5977-5981, Dec. 2004
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
ZANATTA, Antonio Ricardo e RIBEIRO, C. T. M. Laser-induced generation of micrometer-sized luminescent patterns on rare-earth-doped amorphous films. Journal of Applied Physics, v. 96, n. 11, p. 5977-5981, 2004Tradução . . Disponível em: https://doi.org/10.1063/1.1794363. Acesso em: 24 abr. 2024. -
APA
Zanatta, A. R., & Ribeiro, C. T. M. (2004). Laser-induced generation of micrometer-sized luminescent patterns on rare-earth-doped amorphous films. Journal of Applied Physics, 96( 11), 5977-5981. doi:10.1063/1.1794363 -
NLM
Zanatta AR, Ribeiro CTM. Laser-induced generation of micrometer-sized luminescent patterns on rare-earth-doped amorphous films [Internet]. Journal of Applied Physics. 2004 ; 96( 11): 5977-5981.[citado 2024 abr. 24 ] Available from: https://doi.org/10.1063/1.1794363 -
Vancouver
Zanatta AR, Ribeiro CTM. Laser-induced generation of micrometer-sized luminescent patterns on rare-earth-doped amorphous films [Internet]. Journal of Applied Physics. 2004 ; 96( 11): 5977-5981.[citado 2024 abr. 24 ] Available from: https://doi.org/10.1063/1.1794363 - Structural investigation of cobalt oxide films grown by reactive DC magnetron sputtering
- Espectroscopia óptica de vidros fluoroindatos dopados com íons 'Er POT.3+' e 'Yb POT.3+'
- Optoelectronic properties of Er-doped amorphous GaAsN films
- AIN aloys prepared by reactive radio frequency sputtering
- Pulsed laser crystallization of SiGe alloys on GaAs
- Photoluminescence of Sm and Er doped amorphous AIN
- Photoelectron spectroscopic study of amoprhous GaAsN films
- Microcrystalline silicon with high electron field-effect mobility deposited at '230 GRAUS'
- Photon and electron excitation of rare-earth-doped amorphous SiN films
- Photoelectron spectroscopic investigation of Mn-containing amorphous silicon and germanium films
Informações sobre o DOI: 10.1063/1.1794363 (Fonte: oaDOI API)
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