Analysis of transition region and accumulation layer effect in the subthreshold slope in SOI nMOSFETs and their influences on the interface trap density extraction (1999)
- Authors:
- Autor USP: MARTINO, JOÃO ANTONIO - EP
- Unidade: EP
- DOI: 10.1016/s0038-1101(99)00191-4
- Assunto: CIRCUITOS INTEGRADOS MOS
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Solid-State Electronics
- ISSN: 0038-1101
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
SONNENBERG, Victor e MARTINO, João Antonio. Analysis of transition region and accumulation layer effect in the subthreshold slope in SOI nMOSFETs and their influences on the interface trap density extraction. Solid-State Electronics, 1999Tradução . . Disponível em: https://doi.org/10.1016/s0038-1101(99)00191-4. Acesso em: 19 abr. 2024. -
APA
Sonnenberg, V., & Martino, J. A. (1999). Analysis of transition region and accumulation layer effect in the subthreshold slope in SOI nMOSFETs and their influences on the interface trap density extraction. Solid-State Electronics. doi:10.1016/s0038-1101(99)00191-4 -
NLM
Sonnenberg V, Martino JA. Analysis of transition region and accumulation layer effect in the subthreshold slope in SOI nMOSFETs and their influences on the interface trap density extraction [Internet]. Solid-State Electronics. 1999 ;[citado 2024 abr. 19 ] Available from: https://doi.org/10.1016/s0038-1101(99)00191-4 -
Vancouver
Sonnenberg V, Martino JA. Analysis of transition region and accumulation layer effect in the subthreshold slope in SOI nMOSFETs and their influences on the interface trap density extraction [Internet]. Solid-State Electronics. 1999 ;[citado 2024 abr. 19 ] Available from: https://doi.org/10.1016/s0038-1101(99)00191-4 - Temperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs
- Projeto de processos de fabricação avançados aplicáveis nas tecnologias CMOS micrométricas
- Analysis of the linear kink effect in partially depleted SOI nMOSFETs
- Simple method to extract the length dependent mobility degradation factor at 77 K
- Mobility degradation influence on the SOI MOSFET channel length extraction at 77K
- Low temperature and channel engineering influence on harmonic distortion of soi nmosfets for analog applications
- Analysis of the capacitance vs. voltage in graded channel SOI capacitor
- A simple technique to reduce the influence of the series resistance on the BULK and SOI MOSFET parameter extraction
- Metodo simples para a obtencao da densidade de armadilhas na primeira e segunda interface em soi-mosfet
- Simple method for the determination of the interface trap density at 77k in fully depleted acumulation mode soi mosfets
Informações sobre o DOI: 10.1016/s0038-1101(99)00191-4 (Fonte: oaDOI API)
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