Halo effect on 0.13 'mu'm floating-body partially depleted SOI n-Mosfets in low temperature operation (2003)
- Autores:
- Autores USP: MARTINO, JOÃO ANTONIO - EP ; PAVANELLO, MARCELO ANTONIO - EP
- Unidade: EP
- Assunto: MICROELETRÔNICA
- Idioma: Inglês
- Imprenta:
- Editora: The Electrochemical Society
- Local: Pennington
- Data de publicação: 2003
- Fonte:
- Título do periódico: Proceedings
- Nome do evento: International Symposium on Low Temperature Electronics
-
ABNT
MARTINO, João Antonio et al. Halo effect on 0.13 'mu'm floating-body partially depleted SOI n-Mosfets in low temperature operation. 2003, Anais.. Pennington: The Electrochemical Society, 2003. . Acesso em: 19 abr. 2024. -
APA
Martino, J. A., Pavanello, M. A., Simoen, E., & Claeys, C. (2003). Halo effect on 0.13 'mu'm floating-body partially depleted SOI n-Mosfets in low temperature operation. In Proceedings. Pennington: The Electrochemical Society. -
NLM
Martino JA, Pavanello MA, Simoen E, Claeys C. Halo effect on 0.13 'mu'm floating-body partially depleted SOI n-Mosfets in low temperature operation. Proceedings. 2003 ;[citado 2024 abr. 19 ] -
Vancouver
Martino JA, Pavanello MA, Simoen E, Claeys C. Halo effect on 0.13 'mu'm floating-body partially depleted SOI n-Mosfets in low temperature operation. Proceedings. 2003 ;[citado 2024 abr. 19 ] - Potential of improved gain in operational transconductance amplifier using 0,5 Mm graded-channel SOI nMOSFET for applications in the gigahertz range
- Behavior of graded channel SOI gate-all-around NMOSFET devices at high temperatures
- Comparison between conventional and graded-channel SOI nMOSFETs in low temperature operation
- Analog performance of graded-channel SOI NMOSFETS at low temperatures
- Impact of the graded-channel architecture on double gate transistors for high-performance analog applications
- Analysis of deep submicrometer bulk and fully depleted soi nmosfet analog operation at cryogenic temperatures
- Physical characterization and reliability aspects of MuGFETs
- A study on the self-heating effect in deep-submicrometer partially depleted SOI MOSFETs at low temperatures
- Analog circuit design using graded-channel silicon-on-insulator nMOSFETs
- Performance of source follower buffers implemented with standard and strained triple-gate nFinFETs
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