Synchrotron x-ray renninger scanning for studying strain in InAs/GaAs quantum dot system (2007)
- Authors:
- USP affiliated authors: QUIVY, ALAIN ANDRE - IF ; MORELHAO, SERGIO LUIZ - IF
- Unidade: IF
- DOI: 10.1002/pssa.200675673
- Assunto: SUPERFÍCIE FÍSICA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Physica Status Solidi A - Application and Materials Science
- ISSN: 0031-8965
- Volume/Número/Paginação/Ano: v. 204, n. 8, p. 2548-2454, 2007
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
FREITAS, Raul de Oliveira et al. Synchrotron x-ray renninger scanning for studying strain in InAs/GaAs quantum dot system. Physica Status Solidi A - Application and Materials Science, v. 204, n. 8, p. 2548-2454, 2007Tradução . . Disponível em: https://doi.org/10.1002/pssa.200675673. Acesso em: 24 abr. 2024. -
APA
Freitas, R. de O., Lamas, T. E., Quivy, A. A., & Morelhão, S. L. (2007). Synchrotron x-ray renninger scanning for studying strain in InAs/GaAs quantum dot system. Physica Status Solidi A - Application and Materials Science, 204( 8), 2548-2454. doi:10.1002/pssa.200675673 -
NLM
Freitas R de O, Lamas TE, Quivy AA, Morelhão SL. Synchrotron x-ray renninger scanning for studying strain in InAs/GaAs quantum dot system [Internet]. Physica Status Solidi A - Application and Materials Science. 2007 ; 204( 8): 2548-2454.[citado 2024 abr. 24 ] Available from: https://doi.org/10.1002/pssa.200675673 -
Vancouver
Freitas R de O, Lamas TE, Quivy AA, Morelhão SL. Synchrotron x-ray renninger scanning for studying strain in InAs/GaAs quantum dot system [Internet]. Physica Status Solidi A - Application and Materials Science. 2007 ; 204( 8): 2548-2454.[citado 2024 abr. 24 ] Available from: https://doi.org/10.1002/pssa.200675673 - Combining synchrotron X-ray techniques for studying nanostructured semiconductor devices
- Strain field of InAs QDs on GaAs (001) substrates by synchrotron X-ray renninger scanning
- Synchrotron X-ray techniques for studying nanostructured semiconductor devices
- Strong CTR-cap-layer coupling for X-ray scattering in InAs/GaAs (001) quantum dots systems
- Influence of quantum-dots density on average in-plane strain of optoelectronic devices investigated by high-resolution X-ray diffraction
- Strain field of InAs QDs on GaAs(001) substrate surface: characterization by synchrotron X-ray renninger scanning
- Strain field of InAs QDs on GaAs(001) substrate surface: characterization by synchrotron X-ray renninger scanning
- Two-dimensional intensity profiles of effective satellites
- On the high accuracy lattice parameters determination by n-beam diffraction: Theory and application to the InAs quantum dots grown over GaAs(001) substrate system
- High-resolution synchrotron radiation Renninger scan to examine hybrid reflections in InGaP/GaAs(001)
Informações sobre o DOI: 10.1002/pssa.200675673 (Fonte: oaDOI API)
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