Gas sensors based on n-doped carbon nanotubes: ab initio electronic transport calculations (2010)
- Autores:
- Autores USP: SILVA, ANTONIO JOSE ROQUE DA - IF ; FAZZIO, ADALBERTO - IF
- Unidade: IF
- Assunto: ESTRUTURA ELETRÔNICA
- Idioma: Inglês
- Imprenta:
- Fonte:
- Título do periódico: Resumo
- Nome do evento: Escola Brasileira de Estrutura Eletrônica
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ABNT
SILVA, Antonio Jose Roque da et al. Gas sensors based on n-doped carbon nanotubes: ab initio electronic transport calculations. 2010, Anais.. São Paulo: SBF, 2010. Disponível em: http://www.ebee-2010.ufabc.edu.br/programacao.html. Acesso em: 12 maio 2024. -
APA
Silva, A. J. R. da, Fazzio, A., Souza, A. de M., & Rocha, A. R. (2010). Gas sensors based on n-doped carbon nanotubes: ab initio electronic transport calculations. In Resumo. São Paulo: SBF. Recuperado de http://www.ebee-2010.ufabc.edu.br/programacao.html -
NLM
Silva AJR da, Fazzio A, Souza A de M, Rocha AR. Gas sensors based on n-doped carbon nanotubes: ab initio electronic transport calculations [Internet]. Resumo. 2010 ;[citado 2024 maio 12 ] Available from: http://www.ebee-2010.ufabc.edu.br/programacao.html -
Vancouver
Silva AJR da, Fazzio A, Souza A de M, Rocha AR. Gas sensors based on n-doped carbon nanotubes: ab initio electronic transport calculations [Internet]. Resumo. 2010 ;[citado 2024 maio 12 ] Available from: http://www.ebee-2010.ufabc.edu.br/programacao.html - Electronic and structural properties of "C IND.59" Si on the monohydride Si(100) surface
- First principles study of the ferromagnetism in "Ga IND.1-x" "Mn IND.x" As semiconductors
- Adsorption of "C IND.59" Si on Si(100) monohydride surface
- Influence of two vacancies in bubdles and isolated carbon naotubes
- {\it Ab initio} molecular dynamics study of pure and contaminated gold nanowires
- Comparative study of defect energetics in Hf'O IND.2' and Si'O IND. 2'
- Effect of impurities on the breaking of Au nanowires
- Adsorption and incorporation of Mn on Si(100)
- Microscopic picture of the single vacancy in germanium
- Adsorption of monomers on semiconductors and the importance of surface degrees of freedom
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