Ionizing radiation effect mechanisms in electronic devices: how and what to measure (2015)
- Authors:
- USP affiliated authors: ADDED, NEMITALA - IF ; MEDINA, NILBERTO HEDER - IF
- Unidade: IF
- Subjects: FÍSICA NUCLEAR; REAÇÕES NUCLEARES; COLISÕES
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: SBF
- Conference titles: Reunião de Trabalho sobre Física Nuclear no Brasil
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ABNT
SILVEIRA, M. A. G. et al. Ionizing radiation effect mechanisms in electronic devices: how and what to measure. 2015, Anais.. São Paulo: Instituto de Física, Universidade de São Paulo, 2015. Disponível em: http://www1.sbfisica.org.br/eventos/rtfnb/xxxviii/programa/trabalhos.asp?sesId=7. Acesso em: 19 abr. 2024. -
APA
Silveira, M. A. G., Leite, F., Araújo, N. E., Cirne, K. H., Melo, M. A. A., Rallo, A., et al. (2015). Ionizing radiation effect mechanisms in electronic devices: how and what to measure. In SBF. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de http://www1.sbfisica.org.br/eventos/rtfnb/xxxviii/programa/trabalhos.asp?sesId=7 -
NLM
Silveira MAG, Leite F, Araújo NE, Cirne KH, Melo MAA, Rallo A, Santos RBB, Vargas F, Added N, Medina NH. Ionizing radiation effect mechanisms in electronic devices: how and what to measure [Internet]. SBF. 2015 ;[citado 2024 abr. 19 ] Available from: http://www1.sbfisica.org.br/eventos/rtfnb/xxxviii/programa/trabalhos.asp?sesId=7 -
Vancouver
Silveira MAG, Leite F, Araújo NE, Cirne KH, Melo MAA, Rallo A, Santos RBB, Vargas F, Added N, Medina NH. Ionizing radiation effect mechanisms in electronic devices: how and what to measure [Internet]. SBF. 2015 ;[citado 2024 abr. 19 ] Available from: http://www1.sbfisica.org.br/eventos/rtfnb/xxxviii/programa/trabalhos.asp?sesId=7 - Variability in the electrical parameters of power devices by total ionizing dose radiation effects
- Dynamic heavy ions SEE testing of NanoXplore radiation hardened SRAM-based FPGA: Reliability-performance analysis
- Understanding single event effects measurements
- Combined ionizing radiation & electromagnetic interference test procedure to achieve reliable integrated circuits
- Variability in the electrical parameters of power devices by total ionizing dose radiation effects
- A commercial off-the-shelf pMOS transistor as X-ray and heavy ion detector
- Study of radiation effects in embedded systems
- Study of radiation effects in embedded systems
- Development of a system for studies on radiation effects in electronic devices
- Single event effects studies on 3N163 MOSFET
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