Influence of energy structure on recombination lifetime in GaAs/AlGaAs multilayers (2016)
- Authors:
- Autor USP: POUSSEP, IOURI - IFSC
- Unidade: IFSC
- DOI: 10.1063/1.4954161
- Subjects: FOTOLUMINESCÊNCIA; POÇOS QUÂNTICOS; SEMICONDUTORES
- Keywords: Magnetic fields; Photoluminescence; Multiple quantum wells; Electron densities of states; Conduction bands
- Language: Inglês
- Imprenta:
- Publisher place: College Park
- Date published: 2016
- Source:
- Título do periódico: Journal of Applied Physics
- ISSN: 0021-8979
- Volume/Número/Paginação/Ano: v. 119, n. 23, p. 234305-1-234305-4, June 2016
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
TAVARES, B. G. M. e TITO, M. A. e PUSEP, Yuri A. Influence of energy structure on recombination lifetime in GaAs/AlGaAs multilayers. Journal of Applied Physics, v. 119, n. 23, p. 234305-1-234305-4, 2016Tradução . . Disponível em: https://doi.org/10.1063/1.4954161. Acesso em: 29 mar. 2024. -
APA
Tavares, B. G. M., Tito, M. A., & Pusep, Y. A. (2016). Influence of energy structure on recombination lifetime in GaAs/AlGaAs multilayers. Journal of Applied Physics, 119( 23), 234305-1-234305-4. doi:10.1063/1.4954161 -
NLM
Tavares BGM, Tito MA, Pusep YA. Influence of energy structure on recombination lifetime in GaAs/AlGaAs multilayers [Internet]. Journal of Applied Physics. 2016 ; 119( 23): 234305-1-234305-4.[citado 2024 mar. 29 ] Available from: https://doi.org/10.1063/1.4954161 -
Vancouver
Tavares BGM, Tito MA, Pusep YA. Influence of energy structure on recombination lifetime in GaAs/AlGaAs multilayers [Internet]. Journal of Applied Physics. 2016 ; 119( 23): 234305-1-234305-4.[citado 2024 mar. 29 ] Available from: https://doi.org/10.1063/1.4954161 - Transition from localized to extended states below the Fermi level in GaAs/AlGaAs multiple quantum well heterostructures
- Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure
- Plasmon- like oscillations of the electrons localized by the DX centers in doped 'Al IND.X''Ga IND.1-X'As
- Quantum interference and localization in disordered GaAs/AlGaAs superlattices
- Coherency of elementary excitations in disordered electron system
- Miniband effects in short-period InGaAs/InP superlattices
- Coherence of elementary excitations in disordered electron systems
- Conduction mechanisms in GaAs nanowire photovoltaics
- Optical probe of quantum hall state in disordered superlattices embedded in a wide parabolic well
- Circularly polarized photoluminescence of GaAs/AlGaAs quantum hall bilayers
Informações sobre o DOI: 10.1063/1.4954161 (Fonte: oaDOI API)
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