Determination of mobility edge in presence of metal-to-insulator transition (2017)
- Authors:
- Autor USP: POUSSEP, IOURI - IFSC
- Unidade: IFSC
- Subjects: POÇOS QUÂNTICOS; ELÉTRONS; FOTOLUMINESCÊNCIA
- Keywords: Metal-to-insulator transition; Interface; Time-resolved photoluminescence
- Language: Inglês
- Imprenta:
- Publisher: Universidade de São Paulo - USP, Instituto de Física de São Carlos - IFSC
- Publisher place: São Carlos
- Date published: 2017
- Source:
- Título do periódico: Livro de Resumos
- Conference titles: Semana Integrada do Instituto de Física de São Carlos - SIFSC
-
ABNT
TITO, M. A. e PUSEP, Yuri A. Determination of mobility edge in presence of metal-to-insulator transition. 2017, Anais.. São Carlos: Universidade de São Paulo - USP, Instituto de Física de São Carlos - IFSC, 2017. . Acesso em: 19 abr. 2024. -
APA
Tito, M. A., & Pusep, Y. A. (2017). Determination of mobility edge in presence of metal-to-insulator transition. In Livro de Resumos. São Carlos: Universidade de São Paulo - USP, Instituto de Física de São Carlos - IFSC. -
NLM
Tito MA, Pusep YA. Determination of mobility edge in presence of metal-to-insulator transition. Livro de Resumos. 2017 ;[citado 2024 abr. 19 ] -
Vancouver
Tito MA, Pusep YA. Determination of mobility edge in presence of metal-to-insulator transition. Livro de Resumos. 2017 ;[citado 2024 abr. 19 ] - Transition from localized to extended states below the Fermi level in GaAs/AlGaAs multiple quantum well heterostructures
- Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure
- Plasmon- like oscillations of the electrons localized by the DX centers in doped 'Al IND.X''Ga IND.1-X'As
- Quantum interference and localization in disordered GaAs/AlGaAs superlattices
- Coherency of elementary excitations in disordered electron system
- Miniband effects in short-period InGaAs/InP superlattices
- Coherence of elementary excitations in disordered electron systems
- Conduction mechanisms in GaAs nanowire photovoltaics
- Optical probe of quantum hall state in disordered superlattices embedded in a wide parabolic well
- Circularly polarized photoluminescence of GaAs/AlGaAs quantum hall bilayers
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