Atomic geometries of iii-v compound semiconductor surfaces by total energy and force methods (1988)
- Authors:
- Autor USP: FERRAZ, ARMANDO CORBANI - IF
- Unidade: IF
- Language: Português
- Imprenta:
- Publisher: World Scientific
- Publisher place: Singapore
- Date published: 1988
- Source:
- Título do periódico: Proceedings
- Conference titles: Escola Brasileira de Fisica de Semicondutores
-
ABNT
FERRAZ, A. C. e SRIVASTAVA, G. P. Atomic geometries of iii-v compound semiconductor surfaces by total energy and force methods. 1988, Anais.. Singapore: World Scientific, 1988. . Acesso em: 23 abr. 2024. -
APA
Ferraz, A. C., & Srivastava, G. P. (1988). Atomic geometries of iii-v compound semiconductor surfaces by total energy and force methods. In Proceedings. Singapore: World Scientific. -
NLM
Ferraz AC, Srivastava GP. Atomic geometries of iii-v compound semiconductor surfaces by total energy and force methods. Proceedings. 1988 ;[citado 2024 abr. 23 ] -
Vancouver
Ferraz AC, Srivastava GP. Atomic geometries of iii-v compound semiconductor surfaces by total energy and force methods. Proceedings. 1988 ;[citado 2024 abr. 23 ] - Interface geometry of ' ('ga''as') IND.N'' ('in''as') IND.N' and ' ('ga'P) IND.N'' ('in'P) IND.N' ultra-thin superlattices
- Electronic properties and stability of [001] 'GA''AS' / 'IN''AS', 'GA'p / 'IN'p,'GA IND.1-X''IN IND.X''AS' / 'GA''AS' ('IN''AS') and 'GA IND.1-X''IN IND.X'p / 'GA'p ('IN'p)
- Entalpia de formacao e estrutura eletronica de super-redes ultrafinas de iii-v / iv
- Estudo de pseudopotenciais de primeiros principios e sua aplicacao em semicondutores ii-vi
- Estados eletronicos e estrutura atomica da interface znse / znte (001)
- Estudo teorico da acao surfactante do 'TE' no crescimento de 'IN''AS': 'GA''AS'
- Ab initio study of the GaAs(001)-In(4 X 2) surface
- Oxygen adsorption on CdTe(110)
- Role of generalized-gradient approximation in structural and electronic properties of bulk and surface of 'BETA'-GaN and GaAs
- Maleic anhydride adsorption on silicon (001)
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