Self-consistent field variational cellular method as applied to the band structure calculation of sodium (1988)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; FERRAZ, ARMANDO CORBANI - IF
- Unidade: IF
- Assunto: SÓDIO
- Language: Português
- Source:
- Título do periódico: Revista Brasileira de Fisica
- Volume/Número/Paginação/Ano: v.18, n.1 , p.11-29, 1988
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ABNT
LINO, A T et al. Self-consistent field variational cellular method as applied to the band structure calculation of sodium. Revista Brasileira de Fisica, v. 18, n. 1 , p. 11-29, 1988Tradução . . Acesso em: 23 abr. 2024. -
APA
Lino, A. T., Takahashi, E. K., Leite, J. R., & Ferraz, A. C. (1988). Self-consistent field variational cellular method as applied to the band structure calculation of sodium. Revista Brasileira de Fisica, 18( 1 ), 11-29. -
NLM
Lino AT, Takahashi EK, Leite JR, Ferraz AC. Self-consistent field variational cellular method as applied to the band structure calculation of sodium. Revista Brasileira de Fisica. 1988 ;18( 1 ): 11-29.[citado 2024 abr. 23 ] -
Vancouver
Lino AT, Takahashi EK, Leite JR, Ferraz AC. Self-consistent field variational cellular method as applied to the band structure calculation of sodium. Revista Brasileira de Fisica. 1988 ;18( 1 ): 11-29.[citado 2024 abr. 23 ] - Self-consistent formulation of the variational cellular method applied to periodic structures: results for sodium and silicon
- Calculos da estrutura eletronica do bn e bp atraves do metodo celular variacional
- Eletronic structure of semiconductors of group iv and iii-v compounds by the self-consistent variational cellular method
- Band structure of silicon by the self-consistent variational cellular method
- Calculos autoconsistentes da estrutura eletronica do silicio pelo metodo celular variacional
- Band-structure calculations of bn by the self-consistent variational cellular method
- Estrutura eletronica do silicio na aproximacao de supercelula atraves do m c v
- Atomic geometries of iii-v compound semiconductor surfaces by total energy and force methods
- Interface geometry of ' ('ga''as') IND.N'' ('in''as') IND.N' and ' ('ga'P) IND.N'' ('in'P) IND.N' ultra-thin superlattices
- Electronic properties and stability of [001] 'GA''AS' / 'IN''AS', 'GA'p / 'IN'p,'GA IND.1-X''IN IND.X''AS' / 'GA''AS' ('IN''AS') and 'GA IND.1-X''IN IND.X'p / 'GA'p ('IN'p)
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