Band-structure calculations of bn by the self-consistent variational cellular method (1990)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; FERRAZ, ARMANDO CORBANI - IF
- Unidade: IF
- DOI: 10.1103/physrevb.41.1691
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Source:
- Título do periódico: Physical Review B
- Volume/Número/Paginação/Ano: v.41, n.3 , p.1691-4, 1990
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
TAKAHASHI, E K et al. Band-structure calculations of bn by the self-consistent variational cellular method. Physical Review B, v. 41, n. 3 , p. 1691-4, 1990Tradução . . Disponível em: https://doi.org/10.1103/physrevb.41.1691. Acesso em: 19 abr. 2024. -
APA
Takahashi, E. K., Lino, A. T., Ferraz, A. C., & Leite, J. R. (1990). Band-structure calculations of bn by the self-consistent variational cellular method. Physical Review B, 41( 3 ), 1691-4. doi:10.1103/physrevb.41.1691 -
NLM
Takahashi EK, Lino AT, Ferraz AC, Leite JR. Band-structure calculations of bn by the self-consistent variational cellular method [Internet]. Physical Review B. 1990 ;41( 3 ): 1691-4.[citado 2024 abr. 19 ] Available from: https://doi.org/10.1103/physrevb.41.1691 -
Vancouver
Takahashi EK, Lino AT, Ferraz AC, Leite JR. Band-structure calculations of bn by the self-consistent variational cellular method [Internet]. Physical Review B. 1990 ;41( 3 ): 1691-4.[citado 2024 abr. 19 ] Available from: https://doi.org/10.1103/physrevb.41.1691 - Self-consistent field variational cellular method as applied to the band structure calculation of sodium
- Self-consistent formulation of the variational cellular method applied to periodic structures: results for sodium and silicon
- Calculos autoconsistentes da estrutura eletronica do silicio pelo metodo celular variacional
- Calculos da estrutura eletronica do bn e bp atraves do metodo celular variacional
- Eletronic structure of semiconductors of group iv and iii-v compounds by the self-consistent variational cellular method
- Band structure of silicon by the self-consistent variational cellular method
- Estrutura eletronica do silicio na aproximacao de supercelula atraves do m c v
- Atomic geometries of iii-v compound semiconductor surfaces by total energy and force methods
- Interface geometry of ' ('ga''as') IND.N'' ('in''as') IND.N' and ' ('ga'P) IND.N'' ('in'P) IND.N' ultra-thin superlattices
- Electronic properties and stability of [001] 'GA''AS' / 'IN''AS', 'GA'p / 'IN'p,'GA IND.1-X''IN IND.X''AS' / 'GA''AS' ('IN''AS') and 'GA IND.1-X''IN IND.X'p / 'GA'p ('IN'p)
Informações sobre o DOI: 10.1103/physrevb.41.1691 (Fonte: oaDOI API)
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