Lattice response around a silicon vacancy (1990)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; SILVA, EUZI CONCEICAO FERNANDES DA - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Publisher: World Scientific
- Publisher place: Singapure
- Date published: 1990
- Conference titles: Brazilian School of Semiconductors Physics
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ABNT
DAL PINO JUNIOR, A e SILVA, E C F e LEITE, J. R. Lattice response around a silicon vacancy. 1990, Anais.. Singapure: World Scientific, 1990. . Acesso em: 20 abr. 2024. -
APA
Dal Pino Junior, A., Silva, E. C. F., & Leite, J. R. (1990). Lattice response around a silicon vacancy. In . Singapure: World Scientific. -
NLM
Dal Pino Junior A, Silva ECF, Leite JR. Lattice response around a silicon vacancy. 1990 ;[citado 2024 abr. 20 ] -
Vancouver
Dal Pino Junior A, Silva ECF, Leite JR. Lattice response around a silicon vacancy. 1990 ;[citado 2024 abr. 20 ] - Vibrational properties of cubic 'Al IND.X' 'Ga IND.1-X'N and 'In IND.X' 'Ga IND.1-X'N ternary alloys
- Cálculo do espectro de fônons dos nitretos BN, AIN, GaN e InN
- The optical properties o delta-doped single heterojunctions: growth direction effects
- Green's function calculations of the formations entropy of a vacancy in silicon
- Investigation of h-band emission in single heterojunctions: doping role of Si atoms
- The optical property of delta-dopped single heterojunctions: growth direction effects
- Optical response at 1.3 'mu'm and 1.5 'mu'm with InAs quantum dots embedded in a pure GaAs matrix
- Illumination as a tool to investigate the quantum mobility of the two-dimensional electron gas in a Si 'delta'-doped GaAs/'In IND.0.15' 'Ga IND.0.85'As/GaAs quantum well
- Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface
- Effects of thermally activated hole escape mechanism on the optical and electrical properties in 'ro'-type Si 'delta'-doped GaAs(311)A layers
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