Influence of electric fields in the 'SI' delta-doped 'GA''AS' self-consistent potential profile (1992)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; MARTINS, JOSE MANUEL DE VASCONCELOS - IF ; SCOLFARO, LUISA MARIA RIBEIRO - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Source:
- Título do periódico: Superlattices and Microstructures
- Volume/Número/Paginação/Ano: v.12, n.2 , p.203-6, 1992
-
ABNT
SCOLFARO, L M R et al. Influence of electric fields in the 'SI' delta-doped 'GA''AS' self-consistent potential profile. Superlattices and Microstructures, v. 12, n. 2 , p. 203-6, 1992Tradução . . Acesso em: 18 abr. 2024. -
APA
Scolfaro, L. M. R., Camata, R. P., Martins, J. M. de V., & Leite, J. R. (1992). Influence of electric fields in the 'SI' delta-doped 'GA''AS' self-consistent potential profile. Superlattices and Microstructures, 12( 2 ), 203-6. -
NLM
Scolfaro LMR, Camata RP, Martins JM de V, Leite JR. Influence of electric fields in the 'SI' delta-doped 'GA''AS' self-consistent potential profile. Superlattices and Microstructures. 1992 ;12( 2 ): 203-6.[citado 2024 abr. 18 ] -
Vancouver
Scolfaro LMR, Camata RP, Martins JM de V, Leite JR. Influence of electric fields in the 'SI' delta-doped 'GA''AS' self-consistent potential profile. Superlattices and Microstructures. 1992 ;12( 2 ): 203-6.[citado 2024 abr. 18 ] - Efeitos de superficie no calculo de perfis de potencial eletrico em 'GA''AS' com dopagem planar
- Line shape analysis of photoreflectance spectra from 'DELTA'-doped structures
- Effect of temperature on the buit-in electric field in 'GA''AS' / 'GA'as''as': 'SI' heterostructures
- Built-in eletric-field at modulation doped 'GA''AS' / 'GA''AL''AS' heterojunctions and delta-doped 'GA''AS'
- Interband transitions of interband transitions of 'SI' 2-doped layers in para-type 'GA''AS'
- Electronic structure of 'BE'-doped 'GA''AS'
- Estrutura eletronica de pocos quanticos 'AL IND.X' 'GA IND.1-X''AS' / 'GA''AS' delta-dopados ('GAMA'-'SI') sob efeito de campos magneticos
- Electronic structure of n-type 'DELTA'-doping multiple layers and superlattices in silicon
- Band structure of holes in p-'DELTA'-doping superlattices
- Energy levels due to n-type'GAMA'-doping in silicon
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
