Photoluminescence fatigue-effect cycling in porous silicon (1993)
- Authors:
- Autor USP: BASMAJI, PIERRE - IFQSC
- Unidade: IFQSC
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Publisher: Usp/Ufscar
- Publisher place: Sao Carlos
- Date published: 1993
- Source:
- Título do periódico: Abstracts
- Conference titles: Brazilian School of Semiconductor Physics
-
ABNT
GRIVICKAS, V et al. Photoluminescence fatigue-effect cycling in porous silicon. 1993, Anais.. Sao Carlos: Usp/Ufscar, 1993. . Acesso em: 26 abr. 2024. -
APA
Grivickas, V., Bernussi, A., Basmaji, P., Matvienko, B., & Kolenda, J. (1993). Photoluminescence fatigue-effect cycling in porous silicon. In Abstracts. Sao Carlos: Usp/Ufscar. -
NLM
Grivickas V, Bernussi A, Basmaji P, Matvienko B, Kolenda J. Photoluminescence fatigue-effect cycling in porous silicon. Abstracts. 1993 ;[citado 2024 abr. 26 ] -
Vancouver
Grivickas V, Bernussi A, Basmaji P, Matvienko B, Kolenda J. Photoluminescence fatigue-effect cycling in porous silicon. Abstracts. 1993 ;[citado 2024 abr. 26 ] - Heteroestruturas 'AL''GA''AS' / 'GA''AS' com mobilidade 390 x'10 POT.3''CENTIMETROS QUADRADOS' / v.S crescidas por mbe
- 'IN''AS' wire crystals grown by molecular beam epitaxy on porous 'SI'
- Centro dx em estruturas 'AL IND.X''GA IND.1-X''AS' altamente dopada com selenio
- Centro dx em 'AL IND.X''GA IND.1-X''AS': 'SE'
- Medidas de fotoreflectancia em 'DELTA'-doping
- Photoreflectance of 2-d electron gas: observation of quantum franz-keldysh effect?
- Selenium-dx center-doped 'AL IND.X''GA IND.1-X''AS' grown by molecular beam epitaxy
- Espectroscopia de tunelamento em sistemas delta-doping
- Optical and structural properties of low temperature 'GA''AS' layers grown by molecular beam epitaxy
- Magnetic-field-tuned impurity level in a mesoscopic 'AL IND.X''GA IND.1-X''AS' / 'GA''AS' antidot sample
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