Simple method for the determination of the interface trap density at 77k in fully depleted acumulation mode soi mosfets (1993)
- Authors:
- Autor USP: MARTINO, JOÃO ANTONIO - EP
- Unidade: EP
- Assunto: SEMICONDUTORES
- Language: Inglês
- Source:
- Título do periódico: Solid State Electronics
- Volume/Número/Paginação/Ano: v.36, n.6 , p.827-32, jun. 1993
-
ABNT
MARTINO, João Antonio et al. Simple method for the determination of the interface trap density at 77k in fully depleted acumulation mode soi mosfets. Solid State Electronics, v. 36, n. ju 1993, p. 827-32, 1993Tradução . . Acesso em: 23 abr. 2024. -
APA
Martino, J. A., Simoen, E., Magnusson, U., Rotondaro, A. L. P., & Claeys, C. (1993). Simple method for the determination of the interface trap density at 77k in fully depleted acumulation mode soi mosfets. Solid State Electronics, 36( ju 1993), 827-32. -
NLM
Martino JA, Simoen E, Magnusson U, Rotondaro ALP, Claeys C. Simple method for the determination of the interface trap density at 77k in fully depleted acumulation mode soi mosfets. Solid State Electronics. 1993 ;36( ju 1993): 827-32.[citado 2024 abr. 23 ] -
Vancouver
Martino JA, Simoen E, Magnusson U, Rotondaro ALP, Claeys C. Simple method for the determination of the interface trap density at 77k in fully depleted acumulation mode soi mosfets. Solid State Electronics. 1993 ;36( ju 1993): 827-32.[citado 2024 abr. 23 ] - Temperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs
- Projeto de processos de fabricação avançados aplicáveis nas tecnologias CMOS micrométricas
- Analysis of the linear kink effect in partially depleted SOI nMOSFETs
- Simple method to extract the length dependent mobility degradation factor at 77 K
- Mobility degradation influence on the SOI MOSFET channel length extraction at 77K
- Low temperature and channel engineering influence on harmonic distortion of soi nmosfets for analog applications
- Analysis of the capacitance vs. voltage in graded channel SOI capacitor
- A simple technique to reduce the influence of the series resistance on the BULK and SOI MOSFET parameter extraction
- Metodo simples para a obtencao da densidade de armadilhas na primeira e segunda interface em soi-mosfet
- Transistor soi-nmosfet nao auto-alinhado
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