Ligth [i. e. light] assisted electron tunneling by DX center 'GA''AS' / 'AL''AS''GA' heterostructures grown by molecular beam epitaxy (1994)
- Authors:
- Autor USP: BASMAJI, PIERRE - IFSC
- Unidade: IFSC
- Subjects: MATÉRIA CONDENSADA; MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Publisher: Sociedade Brasileira de Fisica
- Publisher place: São Paulo
- Date published: 1994
- Source:
- Título do periódico: Resumos
- Conference titles: Encontro Nacional de Fisica da Materia Condensada
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ABNT
ROSSI, J. C. et al. Ligth [i. e. light] assisted electron tunneling by DX center 'GA''AS' / 'AL''AS''GA' heterostructures grown by molecular beam epitaxy. 1994, Anais.. São Paulo: Sociedade Brasileira de Fisica, 1994. . Acesso em: 23 abr. 2024. -
APA
Rossi, J. C., Lubyshev, D., Gusev, G., & Basmaji, P. (1994). Ligth [i. e. light] assisted electron tunneling by DX center 'GA''AS' / 'AL''AS''GA' heterostructures grown by molecular beam epitaxy. In Resumos. São Paulo: Sociedade Brasileira de Fisica. -
NLM
Rossi JC, Lubyshev D, Gusev G, Basmaji P. Ligth [i. e. light] assisted electron tunneling by DX center 'GA''AS' / 'AL''AS''GA' heterostructures grown by molecular beam epitaxy. Resumos. 1994 ;[citado 2024 abr. 23 ] -
Vancouver
Rossi JC, Lubyshev D, Gusev G, Basmaji P. Ligth [i. e. light] assisted electron tunneling by DX center 'GA''AS' / 'AL''AS''GA' heterostructures grown by molecular beam epitaxy. Resumos. 1994 ;[citado 2024 abr. 23 ] - Heteroestruturas 'AL''GA''AS' / 'GA''AS' com mobilidade 390 x'10 POT.3''CENTIMETROS QUADRADOS' / v.S crescidas por mbe
- 'IN''AS' wire crystals grown by molecular beam epitaxy on porous 'SI'
- Centro dx em estruturas 'AL IND.X''GA IND.1-X''AS' altamente dopada com selenio
- Centro dx em 'AL IND.X''GA IND.1-X''AS': 'SE'
- Medidas de fotoreflectancia em 'DELTA'-doping
- Photoreflectance of 2-d electron gas: observation of quantum franz-keldysh effect?
- Selenium-dx center-doped 'AL IND.X''GA IND.1-X''AS' grown by molecular beam epitaxy
- Espectroscopia de tunelamento em sistemas delta-doping
- Optical and structural properties of low temperature 'GA''AS' layers grown by molecular beam epitaxy
- Magnetic-field-tuned impurity level in a mesoscopic 'AL IND.X''GA IND.1-X''AS' / 'GA''AS' antidot sample
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