Exchange and correlations effects in a semiconductor quantum-well wire (1994)
- Authors:
- USP affiliated authors: DEGANI, MARCOS HENRIQUE - IFSC ; HIPOLITO, OSCAR - IFSC
- Unidade: IFSC
- Subjects: MATÉRIA CONDENSADA; SEMICONDUTORES; MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS)
- Language: Inglês
- Imprenta:
- Publisher: Sociedade Brasileira de Fisica
- Publisher place: São Paulo
- Date published: 1994
- Source:
- Título do periódico: Resumos
- Conference titles: Encontro Nacional de Fisica da Materia Condensada
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ABNT
CAMPOS, V. B. e DEGANI, Marcos Henrique e HIPÓLITO, Oscar. Exchange and correlations effects in a semiconductor quantum-well wire. 1994, Anais.. São Paulo: Sociedade Brasileira de Fisica, 1994. . Acesso em: 24 abr. 2024. -
APA
Campos, V. B., Degani, M. H., & Hipólito, O. (1994). Exchange and correlations effects in a semiconductor quantum-well wire. In Resumos. São Paulo: Sociedade Brasileira de Fisica. -
NLM
Campos VB, Degani MH, Hipólito O. Exchange and correlations effects in a semiconductor quantum-well wire. Resumos. 1994 ;[citado 2024 abr. 24 ] -
Vancouver
Campos VB, Degani MH, Hipólito O. Exchange and correlations effects in a semiconductor quantum-well wire. Resumos. 1994 ;[citado 2024 abr. 24 ] - Electron-phonon effects on the ground impurity level in quasi-one-dimensional semiconductor heterostructures
- Excitation binding energy in 'GA''AS' - 'GA IND.1-X''AL IND.X' as quantum wells
- Temperature dependence of the polaron mass in a 'GA''AS'-'GA IND.1-X''AL IND.X''AS' quantum-well wire
- Impurity-shifted polaron energy in semimagnetic 'CD IND.1-X''MN IND.X' 'TE'-'CD''TE' quantum wells (pt.Ii)
- Modification of the electron-phonon interactions in gaas-gaalas heterojunctions
- Cyclotron resonance of interface polarons in semiconductor heterostructures
- The polaronic state of a multi-electron dimple on the liquid helium film
- Polaron effects on excitons in GaAs-'Ga IND.1-x''Al IND.X'As quantum wells
- IR emission by charge oscilattion in semiconductor heterostructures
- Screened impurity bound states in si mos structures
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