Effect of the temperature cooling rate on the 'SI' / 'SI''O IND.2' interface roughness after rapid thermal oxidation (1994)
- Authors:
- USP affiliated authors: SANTOS FILHO, SEBASTIAO GOMES DOS - EP ; HASENACK, CLAUS MARTIN - EP
- Unidade: EP
- Assunto: CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
- Publisher: Sbmicro/Ufrj
- Publisher place: Rio de Janeiro
- Date published: 1994
- Source:
- Título do periódico: Anais
- Conference titles: Congresso da Sociedade Brasileira de Microeletronica
-
ABNT
SANTOS FILHO, Sebastião Gomes dos et al. Effect of the temperature cooling rate on the 'SI' / 'SI''O IND.2' interface roughness after rapid thermal oxidation. 1994, Anais.. Rio de Janeiro: Sbmicro/Ufrj, 1994. . Acesso em: 24 abr. 2024. -
APA
Santos Filho, S. G. dos, Lopes, M. C. V., Hasenack, C. M., & Baranauskas, V. (1994). Effect of the temperature cooling rate on the 'SI' / 'SI''O IND.2' interface roughness after rapid thermal oxidation. In Anais. Rio de Janeiro: Sbmicro/Ufrj. -
NLM
Santos Filho SG dos, Lopes MCV, Hasenack CM, Baranauskas V. Effect of the temperature cooling rate on the 'SI' / 'SI''O IND.2' interface roughness after rapid thermal oxidation. Anais. 1994 ;[citado 2024 abr. 24 ] -
Vancouver
Santos Filho SG dos, Lopes MCV, Hasenack CM, Baranauskas V. Effect of the temperature cooling rate on the 'SI' / 'SI''O IND.2' interface roughness after rapid thermal oxidation. Anais. 1994 ;[citado 2024 abr. 24 ] - Achievement of high quality thin gates oxides grown by rapid thermal oxidation of silicon
- Mechanisms of metal and sulfur contamination on silicon wafer surfaces during HF-last cleanings. (em CD-Rom)
- A Less critical cleaning procedure for silicon wafers using diluted hf dip and boiling in isopropil alcohol as final steps
- Silicon surface roughening induced by c 'BR''F IND.3' plasma during the reactive ion etching
- Deposition and renoval of surface contaminants from silicon wafers by means of a diluted hp dip followed or not by a isopropyl alcohol boil
- Plating mechanisms of cooper onto silicon surfaces diluted hydrofluoric solutions
- Influence of different rapid thermal oxidation recipes on the rms roughness of the 'SI'-'SI''O IND.2' interface
- Rapid thermal oxidation of silicon with different thermal annealing cycles in nitrogen: influence on surface microroughness and electrical characteristics
- Obtencao de camadas ultrafinas de oxido de silicio por oxidacao termica rapida
- Electroless mechanism of 'CU' plating onto 'SI' during hf-last cleanings
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