Exchange and correlation effects in a semiconductor quantum-well wire (1995)
- Authors:
- USP affiliated authors: HIPOLITO, OSCAR - IFSC ; DEGANI, MARCOS HENRIQUE - IFSC
- Unidade: IFSC
- DOI: 10.1006/spmi.1995.1018
- Subjects: MATÉRIA CONDENSADA; MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS); MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Superlattices and Microstructures
- Volume/Número/Paginação/Ano: v.17, n.1 , p.85-90, 1995
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
CAMPOS, V B e DEGANI, Marcos Henrique e HIPÓLITO, Oscar. Exchange and correlation effects in a semiconductor quantum-well wire. Superlattices and Microstructures, v. 17, n. 1 , p. 85-90, 1995Tradução . . Disponível em: https://doi.org/10.1006/spmi.1995.1018. Acesso em: 24 abr. 2024. -
APA
Campos, V. B., Degani, M. H., & Hipólito, O. (1995). Exchange and correlation effects in a semiconductor quantum-well wire. Superlattices and Microstructures, 17( 1 ), 85-90. doi:10.1006/spmi.1995.1018 -
NLM
Campos VB, Degani MH, Hipólito O. Exchange and correlation effects in a semiconductor quantum-well wire [Internet]. Superlattices and Microstructures. 1995 ;17( 1 ): 85-90.[citado 2024 abr. 24 ] Available from: https://doi.org/10.1006/spmi.1995.1018 -
Vancouver
Campos VB, Degani MH, Hipólito O. Exchange and correlation effects in a semiconductor quantum-well wire [Internet]. Superlattices and Microstructures. 1995 ;17( 1 ): 85-90.[citado 2024 abr. 24 ] Available from: https://doi.org/10.1006/spmi.1995.1018 - Electron-phonon effects on the ground impurity level in quasi-one-dimensional semiconductor heterostructures
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- Modification of the electron-phonon interactions in gaas-gaalas heterojunctions
- Cyclotron resonance of interface polarons in semiconductor heterostructures
- The polaronic state of a multi-electron dimple on the liquid helium film
- Polaron effects on excitons in GaAs-'Ga IND.1-x''Al IND.X'As quantum wells
- IR emission by charge oscilattion in semiconductor heterostructures
Informações sobre o DOI: 10.1006/spmi.1995.1018 (Fonte: oaDOI API)
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