Optical anisotropy in (311) 'IN''GA''AS' / 'GA''AS' quantum wells (1996)
- Authors:
- USP affiliated authors: BASMAJI, PIERRE - IFSC ; GUIMARAES, FRANCISCO EDUARDO GONTIJO - IFSC
- Unidade: IFSC
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Resumos
- Conference titles: Encontro Nacional de Fisica da Materia Condensada
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ABNT
RIBEIRO, A. A et al. Optical anisotropy in (311) 'IN''GA''AS' / 'GA''AS' quantum wells. 1996, Anais.. São Paulo: Sbf, 1996. . Acesso em: 19 abr. 2024. -
APA
Ribeiro, A. A., Narvaez, G. A., Ribeiro, E., Cerdeira, F., Guimarães, F. E. G., Lubyshev, D. I., & Basmaji, P. (1996). Optical anisotropy in (311) 'IN''GA''AS' / 'GA''AS' quantum wells. In Resumos. São Paulo: Sbf. -
NLM
Ribeiro AA, Narvaez GA, Ribeiro E, Cerdeira F, Guimarães FEG, Lubyshev DI, Basmaji P. Optical anisotropy in (311) 'IN''GA''AS' / 'GA''AS' quantum wells. Resumos. 1996 ;[citado 2024 abr. 19 ] -
Vancouver
Ribeiro AA, Narvaez GA, Ribeiro E, Cerdeira F, Guimarães FEG, Lubyshev DI, Basmaji P. Optical anisotropy in (311) 'IN''GA''AS' / 'GA''AS' quantum wells. Resumos. 1996 ;[citado 2024 abr. 19 ] - Temperature effects on the optical properties of InGaAs/GaAs single quantum wells grown on high index GaAs substrates with non-abrupt interfaces
- Influence of surface structure on segregation and alloy properties in (100)- and (311)-oriented 'IN''GA''AS' / 'GA''AS' heterostructures
- Influence of surface structure on surface segregation and alloy properties in (100)- and (311)- oriented 'IN''GA''AS' / 'GA''AS' heterostructures
- Luminescence centers in porous silicon
- Influence of surface structure on segregation and alloy properties in (100)- and (311)-oriented 'IN''GA''AS' / 'GA''AS' heterostructures
- Influence of surface structure on segregation and alloy properties in (100)- and (311)- oriented 'IN''GA''AS' / 'GA''AS' heterostructures
- Optical anisotropy in (311) 'IN IND.1-X''GA IND.X''AS' / 'GA''AS' quantum wells
- Influence of surface structure on segregation and alloy quality in (100) and (311) oriented InGaAs/GaAs heterostructures
- Propriedades oticas de heteroestruturas semicondutoras de 'IN''GA''AS' / 'GA''AS' crescidas nas direcoes [100] e [311]
- Influence of surface structure on segregation and alloy properties in (100)- and (311)-oriented 'IN''GA''AS' / 'GA''AS' heterostructures
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